Datasheet > IRF236

IRF236

更新时间： 2024-11-26 22:48:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	72K
描述
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

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IRF236 数据手册

IRF234, IRF235,

IRF236, IRF237

Semiconductor

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,

N-Channel Power MOSFETs

January 1998

Features

Description

• 8.1A and 6.5A, 275V and 250V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

• r

DS(ON)

= 0.45Ω and 0.68Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA17413.

• 275V, 250V DC Rated - 120V AC Line System

Operation

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

IRF234

PACKAGE

TO-204AA

BRAND

IRF234

IRF235

IRF236

IRF237

IRF235

IRF236

IRF237

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 2208.3

5-1

12 3 4 5 6 7

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与IRF236相关器件

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IRF236R	RENESAS	获取价格	8.1A, 275V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF237	INTERSIL	获取价格	8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
IRF237R	RENESAS	获取价格	6.5A, 275V, 0.68ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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