IR2101STR

更新时间： 2024-02-25 10:29:58

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管 PC
页数	文件大小	规格书
6页	369K
描述
暂无描述

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IR2101STR 数据手册

Previous Datasheet

Index

Next Data Sheet

IR2101

Device Information

Process & Design Rule

Transistor Count

Die Size

HVDCMOS 4.0 µm

168

67 X 91 X 26 (mil)

Die Outline

Thickness of Gate Oxide

Connections

First

800Å

Poly Silicon

4 µm

Material

Width

Layer

Spacing

Thickness

Material

Width

Spacing

Thickness

6 µm

5000Å

Al - Si (Si: 1.0% ±0.1%)

6 µm

Second

Layer

9 µm

20,000Å

Contact Hole Dimension

Insulation Layer

5 µm X 5 µm

PSG (SiO₂)

1.5 µm

PSG (SiO₂)

1.5 µm

Material

Thickness

Material

Passivation

Thickness

Method of Saw

Method of Die Bond

Wire Bond

Full Cut

Ablebond 84 - 1

Thermo Sonic

Au (1.0 mil / 1.3 mil)

Method

Material

Die Area

Leadframe

Lead Plating

Types

Materials

Pb : Sn (37 : 63)

8 Lead PDIP / SO-8

EME6300 / MP150 / MP190

Package

Remarks:

CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-5

To Order

1 2 3 456

下载PDF

与IR2101STR相关器件

型号	品牌	描述	获取价格	数据表
IR2101STRPBF	INFINEON	Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8, MS-012AA, SOIC-8	获取价格
IR2102	INFINEON	HIGH AND LOW SIDE DRIVER	获取价格
IR21024	INFINEON	HIGH AND LOW SIDE DRIVER	获取价格
IR21024PBF	INFINEON	Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDIP14, PLASTIC, DIP-14	获取价格
IR21024S	INFINEON	Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO14, SOIC-14	获取价格
IR2102C	INFINEON	暂无描述	获取价格