IR2103

更新时间： 2024-01-07 20:10:15

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器
页数	文件大小	规格书
12页	121K
描述
HALF-BRIDGE DRIVER

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数据手册

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IR2103 数据手册

Data Sheet No. PD60045-N

( )

IR2103

HALF-BRIDGE DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

600V max.

130 mA / 270 mA

10 - 20V

OFFSET

I +/-

OUT

• 3.3V, 5V and 15V logic compatible

• Cross-conduction prevention logic

• Matched propagation delay for both channels

• Internal set deadtime

• High side output in phase with HIN input

• Low side output out of phase with LIN input

(typ.)

680 & 150 ns

520 ns

on/off

Deadtime (typ.)

Packages

Description

The IR2103(S) are high voltage, high speed power

MOSFET and IGBT drivers with dependent high and

low side referenced output channels.Proprietary HVIC

and latch immune CMOS technologies enable rug-

gedized monolithic construction. The logic input is

compatible with standard CMOS or LSTTL output,

down to 3.3V logic. The output drivers feature a high

8-Lead SOIC

IR2103S

8-Lead PDIP

IR2103

pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to

drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection

up to 600V

V_CC

V_B

V_S

HIN

LIN

HIN

LIN

LOAD

COM

(Refer to Lead Assignments for correct configuration).This/These diagram(s) show electrical connections only.

Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...12

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