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IR2101STRPBF PDF预览

IR2101STRPBF

更新时间: 2024-02-23 18:25:05
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
13页 133K
描述
Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8, MS-012AA, SOIC-8

IR2101STRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.22
高边驱动器:YES输入特性:SCHMITT TRIGGER
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出特性:TOTEM-POLE
标称输出峰值电流:0.36 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:15 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.22 µs
接通时间:0.22 µs宽度:3.9 mm
Base Number Matches:1

IR2101STRPBF 数据手册

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Data Sheet No. PD60043-M  
( )  
( )  
S
S
IR2101  
IR2102  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
V
600V max.  
130 mA / 270 mA  
10 - 20V  
OFFSET  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Gate drive supply range from 10 to 20V  
Undervoltage lockout  
I +/-  
O
V
OUT  
3.3V, 5V, and 15V logic input compatible  
Matched propagation delay for both channels  
Outputs in phase with inputs (IR2101) or out of  
phase with inputs (IR2102)  
t
(typ.)  
160 & 150 ns  
50 ns  
on/off  
Delay Matching  
Packages  
Description  
The IR2101/IR2102 are high voltage, high speed  
power MOSFET and IGBT drivers with independent  
high and low side referenced output channels. Pro-  
prietary HVIC and latch immune CMOS technolo-  
gies enable ruggedized monolithic construction.The  
logic input is compatible with standard CMOS or  
LSTTL output, down to 3.3V logic. The output drivers  
feature a high pulse current buffer stage designed  
8 Lead SOIC  
8 Lead PDIP  
for minimum driver cross-conduction.The floating channel can be used to drive an N-channel power MOSFET  
or IGBT in the high side configuration which operates up to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
HIN  
LIN  
VB  
HO  
VS  
HIN  
LIN  
TO  
LOAD  
COM  
LO  
IR2101  
up to 600V  
VCC  
VCC  
HIN  
LIN  
VB  
HO  
VS  
HIN  
LIN  
TO  
LOAD  
COM  
LO  
IR2102  
(Refer to leads assignments for correct configuration)  
www.irf.com  
1

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