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IR01H214 PDF预览

IR01H214

更新时间: 2024-11-11 11:09:07
品牌 Logo 应用领域
英飞凌 - INFINEON 高压
页数 文件大小 规格书
7页 60K
描述
HIGH VOLTAGE HALF BRIDGE

IR01H214 数据手册

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Data Sheet No. PD-6.075-G  
IR01H(D)214 / IR01H(D)214-P2  
IR01H(D)224 / IR01H(D)224-P2  
IR01H(D)420 / IR01H(D)420-P2  
HIGH VOLTAGE HALF BRIDGE  
Product Summary  
Features  
Output Power MOSFETs in half-bridge configuration  
500V rated breakdown voltage  
High side gate drive designed for bootstrap  
operation  
Matched propagation delay for both channels  
Undervoltage lockout  
250V- 214/224  
500V - 420  
V
(max)  
IN  
t
130 & 90 ns  
260 ns  
on/off  
t
rr  
5V Schmitt-triggered input logic  
Half-Bridge output in phase with HIN  
R
2.0- H214  
1.1- H224  
3.0- H420  
DS(on)  
Heatsink version (P2) with improved P  
D
Description  
The IR01H(D)xxx is a high voltage, high speed half  
bridge. Proprietary HVIC and latch immune CMOS  
technologies, along with the HEXFET power  
o
P (T = 25 C)  
2.0W  
4.0W - P2  
D
A
MOSFET technology, enable ruggedized single  
package construction. The logic inputs are compat-  
ible with standard CMOS or LSTTL outputs. The  
front end features an independent high and low side  
driver in phase with the logic compatible input  
signals. The output features two HEXFETs in a half-  
bridge configuration with a high pulse current buffer  
stage designed for minimum cross-conduction in the  
half bridge. Propagation delays for the high and low  
side power MOSFETs are matched to simplify use.  
Packages  
Typical Connection  
HV DC Bus  
VIN  
NOTE: D1 is not required for  
the HD type  
D1  
Vcc  
1
6
9
7
Vcc  
HIN  
LIN  
VB  
HIN  
L IN  
2
3
V
IN  
VO  
TO  
LOAD  
COM  
4
COM  
1

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