IPSH6N03LB

更新时间： 2024-01-28 22:28:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	312K
描述
OptiMOS㈢2 Power-Transistor

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数据手册

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IPSH6N03LB 数据手册

Type

IPUH6N03LB

Product Summary

IPSH6N03LB

OptiMOS^®2 Power-Transistor

Package

V _DS

6.3

Marking

R _DS(on),max

I _D

mΩ

• Qualified according to JEDEC¹⁾for target applications

• N-channel - Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Superior thermal resistance

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

Type

IPUH6N03LB

IPSH6N03LB

Package

Marking

PG-TO251-3

H6N03LB

PG-TO251-3-11

H6N03LB

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

T _C=25 °C³⁾

I _D,pulse

Pulsed drain current

200

160

E _AS

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=50 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage⁴⁾

Power dissipation

V _GS

±20

P _tot

T _C=25 °C

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

Rev. 0.3

page 1

2006-05-15

12 3 4 5 6 7...10

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