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IPD105N04LG PDF预览

IPD105N04LG

更新时间: 2024-11-21 11:08:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 232K
描述
OptiMOS3 Power-Transistor

IPD105N04LG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
Is Samacsys:N雪崩能效等级(Eas):10 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):40 A
最大漏源导通电阻:0.0105 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):42 W
最大脉冲漏极电流 (IDM):280 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPD105N04LG 数据手册

 浏览型号IPD105N04LG的Datasheet PDF文件第2页浏览型号IPD105N04LG的Datasheet PDF文件第3页浏览型号IPD105N04LG的Datasheet PDF文件第4页浏览型号IPD105N04LG的Datasheet PDF文件第5页浏览型号IPD105N04LG的Datasheet PDF文件第6页浏览型号IPD105N04LG的Datasheet PDF文件第7页 
IPD105N04L G  
OptiMOS®3 Power-Transistor  
Product Summary  
Features  
V DS  
40  
10.5  
40  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 100% Avalanche tested  
• Pb-free plating; RoHS compliant  
Type  
IPD105N04L G  
Package  
Marking  
PG-TO252-3  
105N04L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V GS=10 V, T C=25 °C  
Continuous drain current  
40  
34  
40  
A
V
V
GS=10 V, T C=100 °C  
GS=4.5 V, T C=25 °C  
V
GS=4.5 V,  
29  
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T C=25 °C  
280  
40  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=40 A, R GS=25 Ω  
10  
mJ  
V
±20  
1) J-STD20 and JESD22  
Rev. 1.0  
page 1  
2007-12-06  

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