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IPBH6N03LAG

更新时间: 2024-11-05 03:41:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 280K
描述
OptiMOS㈢2 Power-Transistor

IPBH6N03LAG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0062 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):71 W
最大脉冲漏极电流 (IDM):350 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPBH6N03LAG 数据手册

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IPBH6N03LA G  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
25  
6.2  
50  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
PG-TO263-3-2  
• Superior thermal resistance  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
Type  
Package  
Marking  
IPBH6N03LA G  
PG-TO263-3-2  
H6N03LA  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
50  
50  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
350  
150  
E AS  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
71  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 1.2  
page 1  
2006-05-11  

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