Datasheet > INA5006AC1

INA5006AC1

更新时间： 2025-07-28 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
2页	115K
描述
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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数据手册

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INA5006AC1 数据手册

INA5006AC1

PRELIMINARY

Notice：This is not a final specification

Some parametric are subject to change.

FOR HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

2.8

1.5

INA5006AC1 is a silicon PNP epitaxial type transistor.

It is designed with high collector current and small V_CE(sat)

0.65

FEATURE

①

②

・Super mini package for easy mounting

・High collector current(I_C=-3A)

・Low collector saturation voltage

(V_CE（sat）<-0.2V_max；I_C=-1A、I_B=-33mA)

③

APPLICATION

Audiovisual apparatus, Relay drive

JEITA:SC-59

JEDEC: Similar to TO-236

Terminal Connector

①：Base

②：Emitter

③：Collector

MAXIMUM RATING（Ta=25℃）

SYMBOL

V_CEO

V_CBO

V_EBO

I _C

PARAMETER

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Collector current

RATING

-50

UNIT

MARKING

Type Name

-50

-7

-3

P_C

Collector dissipation(Ta=25℃)

Junction temperature

200

℃

A E J

T_j

＋150

-55～＋150

T_stg

Storage temperature

ELECTRICAL CHARACTERISTICS（Ta=25℃）

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

MIN

-50

-7

TYP

MAX

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

C to E break down voltage

C to B break down voltage

E to B break down voltage

Collector cut off current

Emitter cut off current

I _C=-10mA，I _B=0mA

I _C=-100μA，I _E=0mA

I _E=-100μA，I _C=0mA

V_CB=-50V，I _E=0mA

V_EB=-7V，I _C=0mA

-0.1

500

μA

I_EBO

ｈ_ＦＥ1

DC forward current gain1

DC forward current gain2

C to E saturation voltage

B to E saturation voltage

Gain bandwidth product

Collector output capacitance

V_CE=-2V，I _C=-300mA

V_CE=-2V，I _C=-1A

200

100

ｈ_ＦＥ2

V_CE(sat)

V_BE(sat)

f_T

I _C=-1A，I _B=-33mA

V_CE=-2V，I _E=300mA，f=100MHz

V_CB=-10V，f=100MHz

-0.2

-1.1

180

MHz

Cob

ISAHAYA ELECTRONICS CORPORATION

中文翻译

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