Datasheet > INA6002AC1

INA6002AC1

更新时间： 2024-11-13 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
3页	70K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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中文翻译

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数据手册

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INA6002AC1 数据手册

<SMALL-SIGNAL TRANSISTOR>

PRELIMINARY

INA6002AC1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

Notice : This is not a final specification.

Some parametric subject to change.

DESCLIPTION

OUTLINE DRAWING

Unit：mm

2.8

1.5

INA6002AC1 is a silicon PNP epitaxial type transistor.

It is designed with high voltage.

0.65

FEATURE

(1)

(2)

・Super mini package for easy mounting.

・Hige voltage VCEO=-300V

(3)

APPLICATION

DC/DC convertor, High voltage switching

TERMINAL CONNECTER

(1) BASE

JEITA：SC-59

JEDEC：Similar toTO-236

(2) EMITTER

(3) COLLECTOR

MAXIMUM RATINGS （Ta=25℃）

Symbol

VCBO

VEBO

VCEO

Parameter

Collector-Base Voltage

Emitter-Base Voltage

Collector-Emitter Voltage

Collector Current

Ratings

-300

Unit

MARKING

-7

-300

-50

℃

3 W

Collector Dissipation

Junction Temperature

Storage Temperature

150

Tstg

-55～+150

ELECTRIC CHARACTERISTICS （Ta=25℃）

Limits

Typ

Symbol

Parameter

Test conditions

Unit

Min

-300

-7

-300

Max

V(BR)CBO

V(BR)EBO

V(BR)CEO

ICBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

IC=-50µA，IE=0

IE=-50µA，IC=0

IC=-1mA，RBE=∞

VCB=-300V，IE=0

VEB=-5V，IC=0

-0.5

305

-1.0

µA

IEBO

Emitter Cutoff Current

hFE

DC Forward Current Gain

VCE=-10V，IC=-1mA

IC=-10mA，IB=-1mA

VCE=-6V，IE=10mA

VCB=-6V，IE=0，f=1MHz

VCE(sat)

Collector-Emitter Saturation Voltage

Gain Bandwidth Product

2.6

MHz

Cob

Collector Output Capacitance

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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