Datasheet > INA592IDGKR

INA592IDGKR

更新时间： 2024-09-26 11:07:51

品牌	Logo	应用领域
德州仪器 - TI		放大器
页数	文件大小	规格书
45页	3322K
描述
高精密（40µV 失调电压）、2MHz、88dB CMRR、低功耗、e-trim™ 差分放大器 \| DGK \| 8 \| -40 to 125

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INA592IDGKR 数据手册

INA592

www.ti.com

SBOS914E – OCTOBER 2018 – REVISED FEBRUARY 2021

INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features

3 Description

•

G = 1/2 amplifier

G = 2 amplifier

The INA592 device is a low-power, wide bandwidth

difference amplifier consisting of precision

operational amplifier (op amp) and a precision resistor

network. Excellent tracking of resistors (TCR)

maintains gain accuracy and common-mode rejection

over temperature. Unique features such as low offset

40 μV (maximum), low offset drift (2 μV/°C maximum)

high slew rate (18 V/μs), and high capacitive load

drive of up to 500 pF make the INA592 a robust, high-

performance difference amplifier for high-voltage

industrial applications. The common-mode range of

the internal op amp extends to the negative supply,

enabling the device to operate in single-supply

applications. The device operates on single (4.5 V to

36 V) or dual supplies (±2.25 V to ±18 V).

Low offset voltage: 40 μV (maximum)

Low offset voltage drift: ±2 μV/°C (maximum)

Low noise: 18 nV/√Hz at 1 kHz

Low gain error: ±0.03% (maximum)

High common-mode rejection: 88 dB (minimum)

Wide bandwidth: 2 MHz GBW

Low quiescent current: 1.1 mA per amplifier

High slew rate: 18 V/μs

High capacitive load drive capability: 500 pF

Wide supply range:

– Single supply: 4.5 V to 36 V

– Dual supply: ±2.25 V to ±18 V

Specified temperature range:

The difference amplifier is the foundation of many

commonly used circuits. The INA592 provides this

circuit function without using an expensive precision

resistor network.

•

–40°C to +125°C

Packages: 8-Pin MSOP and SOIC, 10-pin VSON

2 Applications

Device Information

PART NUMBER

PACKAGE⁽¹⁾

BODY SIZE (NOM)

4.90 mm × 3.91 mm

3.00 mm × 3.00 mm

•

AC drive position feedback

Servo drive position feedback

Condition monitoring module (voltage, current)

Power supply module

SOIC (8)

VSSOP (8)

INA592

VSON (10) (Preview) 3.00 mm × 3.00 mm

Semiconductor test

(1) For all available packages, see the package option

addendum at the end of the data sheet.

VCC

20%

15%

10%

INA592

V+

SENSE

œIN

12 kꢀ

6 kꢀ

ADC

16 Bits Out

AIN

OUT

REF

6 kꢀ

+IN

Vœ

-40 -32 -24 -16

-8

⁽V_+INV_-IN

)

OUT

Offset Voltage (mV)

Typical Distribution of Offset Voltage (RTO)

G = 1/2, V_S= ±18 V

INA592D/DGK in a Differential Input Data

Acquisition Application

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Product Folder Links: INA592

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与INA592IDGKR相关器件

型号	品牌	获取价格	描述	数据表
INA592IDGKT	TI	获取价格	高精密（40µV 失调电压）、2MHz、88dB CMRR、低功耗、e-trim™ 差分放
INA592IDR	TI	获取价格	INA592 High-Precision, Wide-Bandwidth e-trimâ
INA592IDRCR	TI	获取价格	INA592 High-Precision, Wide-Bandwidth e-trimâ
INA592IDRCT	TI	获取价格	INA592 High-Precision, Wide-Bandwidth e-trimâ
INA592IDT	TI	获取价格	INA592 High-Precision, Wide-Bandwidth e-trimâ
INA597	TI	获取价格	精密（200µV 失调电压）、2MHz、88dB CMRR、低功耗、e-trim™ 差分放
INA597_V01	TI	获取价格	INA597 High-Precision, Wide-Bandwidth e-trimâ
INA597_V02	TI	获取价格	INA597 High-Precision, Wide-Bandwidth e-trimâ
INA597IDGKR	TI	获取价格	精密（200µV 失调电压）、2MHz、88dB CMRR、低功耗、e-trim™ 差分放
INA597IDGKT	TI	获取价格	精密（200µV 失调电压）、2MHz、88dB CMRR、低功耗、e-trim™ 差分放

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