Datasheet > IMB16

IMB16

更新时间： 2024-11-20 23:58:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
1页	22K
描述
TRANSISTOR \| 50V V(BR)CEO \| 500MA I(C) \| TSOP

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中文翻译

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数据手册

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IMB16 数据手册

IMB16

Transistors

General purpose (dual digital transistors)

IMB16

zExternal dimensions (Units : mm)

zFeatures

1) Two DTB143X chips in a SMT package.

IMB16

zEquivalent circuit

1.6

2.8

(4)

(5)

(6)

0.3to0.6

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

(3)

(2)

(1)

zPackage, marking, and packaging specifications

Type

Package

IMB16

SMT6

B16

Marking

Code

T110

3000

Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Symbol

Limits

−50

Unit

VCC

−30

Input voltage

Output current

−500

°C

Power dissipation

Junction temperature

300(TOTAL)

150

Storage temperature

Tstg

−50~

+150

°C

200mW per element must not be exceeded.

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

−

Max.

−0.3

−

Conditions

Unit

I (off)

−

−2.5

−

CC=−5V, I

=−0.3V, I

/I =−50mA/−2.5mA

=−5V

CC=−50V, V

=−50mA, V

CE=−10V, I

=−100µA

Input voltage

VI (on)

−

O=−20mA

Output voltage

Input current

VO (on)

−

−0.3

−1.8

−0.5

−

µA

−

O I

−

Output current

DC current gain

O (off)

−

=0V

=−5V

−

Transition frequency

Input resistance

Resistance ratio

200

4.7

2.1

−

MHz

kΩ

−

=50mA, f=100MHz

−

3.29

1.7

6.11

2.6

/ R1

−

1 Measured using pulse current.

2 Transition frequency of the device.

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