Datasheet > ILQ615-2

ILQ615-2

更新时间： 2024-11-12 22:33:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体光电晶体管光电晶体管输出元件
页数	文件大小	规格书
5页	99K
描述
PHOTOTRANSISTOR OPTOCOUPLER

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技术参数
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ILQ615-2 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	DIP-16	Reach Compliance Code：	compliant
HTS代码：	8541.40.80.00	风险等级：	5.5
其他特性：	UL APPROVED	Coll-Emtr Bkdn Voltage-Min：	70 V
配置：	SEPARATE, 4 CHANNELS	标称电流传输比：	80%
最大暗电源：	50 nA	最大正向电流：	0.06 A
最大绝缘电压：	5300 V	JESD-609代码：	e0
元件数量：	4	最高工作温度：	100 °C
最低工作温度：	-55 °C	光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

ILQ615-2 数据手册

DUAL CHANNEL ILD615

QUAD CHANNEL ILQ615

PHOTOTRANSISTOR OPTOCOUPLER

FEATURES

• Identical Channel to Channel Footprint

• Current Transfer Ratio (CTR) Range at

I =10 mA

Dimensions in inches (mm)

ILD/Q615-1: 40 – 80% Min.

ILD/Q615-2: 63 – 125% Min.

ILD/Q615-3: 100 – 200% Min.

ILD/Q615-4: 160 – 320% Min.

Pin One I.D.

Anode

Collector

Emitter

.268 (6.81)

.255 (6.48)

Cathode

Anode

• Guaranteed CTR at I =1 mA

Collector

Emitter

ILD/Q615-1: 13% Min.

ILD/Q615-2: 22% Min.

Cathode

.390 (9.91)

.379 (9.63)

ILD/Q615-3: 34% Min.

.150 (3.81)

.130 (3.30)

.305 Typ.

(7.75) Typ.

ILD/Q615-4: 56% Min.

• High Collector-Emitter Voltage BV

.045 (1.14)

.030 (.76)

=70 V

CEO

• Dual and Quad Packages Feature:

.135 (3.43)

.115 (2.92)

4°

Reduced Board Space

Lower Pin and Parts Count

Better Channel to Channel CTR Match

Improved Common Mode Rejection

10 ° Typ.

Typ.

.040 (1.02)

.030 (.76 )

3°–9°

.012 (.30)

.008 (.20)

.022 (.56)

.018 (.46)

.100 (2.54) Typ.

• Field-Effect Stable byTRIOS (TRansparent IOn

Shield)

• Isolation Test Voltage from Double Molded

Collector

Emitter

One

I.D.

Anode

Cathode

Package, 5300 VAC

RMS

Collector

Emitter

Anode

Cathode

Anode

• UL Approval #E52744

• VDE #0884 Available with Option 1

.268 (6.81)

.255 (6.48)

12 Collector

11 Emitter

Maximum Ratings (Each Channel)

Cathode

Anode

Emitter

Collector

.790 (20.07)

.779 (19.77 )

Reverse Voltage ................................................ 6 V

Forward Current ........................................... 60 mA

Surge Current .................................................1.5 A

Power Dissipation ...................................... 100 mW

Derate Linearly from 25°C ................... 1.33 mW/°C

Emitter

Cathode

.305 Typ.

(7.75) Typ.

.045 (1.14)

.030 (.76)

.150 (3.81)

.130 (3.30)

.135 (3.43)

.115 (2.92)

4°

Typ.

10 ° Typ.

3°–9°

Detector

.040 (1.02)

.030 (.76 )

Collector-Emitter Reverse Voltage .................. 70 V

Emitter-Collector Reverse Voltage .................... 7 V

Collector Current.......................................... 50 mA

Collector Current (t <1 ms) .........................100 mA

Power Dissipation ...................................... 150 mW

Derate Linearly from 25°C........................ 2 mW/°C

.022 (.56)

.018 (.46)

.012 (.30)

.008 (.20)

.100 (2.54) Typ.

DESCRIPTION

The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs

IRLED emitters and high gain NPN phototransistors. These devices are con-

structed using over/under leadframe optical coupling and double molded

Package

Storage Temperature................... –55°C to +150°C

Operating Temperature ............... –55°C to +100°C

Junction Temperature.................................... 100°C

Soldering Temperature

insulation technology resulting a Withstand Test Voltage of 7500 VAC

PEAK

and a Working Voltage of 1700 VAC

RMS

The binned min./max. and linear CTR characteristics combined with the

TRIOS (TRansparent IOn Shield) ﬁeld-effect process make these devices

well suited for DC or AC voltage detection. Eliminating the phototransistor

base connection provides added electrical noise immunity from the tran-

sients found in many industrial control environments.

(2 mm distance from case bottom) ........... 260°C

Package Power Dissipation, ILD615.......... 400 mW

Derate Linearly from 25°C.................. 5.33 mW/°C

Package Power Dissipation, ILQ615 ......... 500 mW

Derate Linearly from 25°C................. 6.67 mW/°C

Isolation Test Voltage (t=1 sec.)........ 5300 VAC

Creepage ............................................... 7 mm min.

Clearance............................................... 7 mm min.

Because of guaranteed maximum non-saturated and saturated switching

characteristics, the ILD/Q615 can be used in medium speed data I/O and

control systems. The binned min./max. CTR speciﬁcation allow easy worst

case interface calculations for both level detection and switching applica-

tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at

RMS

Isolation Resistance

V =500 V, T =25°C ............................... ≥10

Ω

V =500 V, T =100°C ............................. ≥10

an I =1 mA.

See Appnote 45, “How to Use Optocoupler Normalized Curves.”

5–1

12 3 4 5

中文翻译

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与ILQ615-2相关器件

型号	品牌	获取价格	描述	数据表
ILQ615-2X001	VISHAY	获取价格	Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT,
ILQ615-2-X001	VISHAY	获取价格	Transistor Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-16
ILQ615-2X007	VISHAY	获取价格	Optocoupler, Phototransistor Output (Dual, Quad Channel)
ILQ615-2-X007T	VISHAY	获取价格	Transistor Output Optocoupler, 4-Element, 5300V Isolation, DIP-16
ILQ615-2-X009T	VISHAY	获取价格	Transistor Output Optocoupler, 4-Element, 5300V Isolation, DIP-16
ILQ615-2X017	VISHAY	获取价格	OPTOCOUPL DC-IN 4-CH TRANS DC-OUT 16PDIP SMD - Bulk
ILQ615-2-X017	VISHAY	获取价格	Transistor Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SMD, 16 PIN
ILQ615-2-X017	INFINEON	获取价格	4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, DIP-16
ILQ615-2-X017T	VISHAY	获取价格	Transistor Output Optocoupler, 4-Element, 5300V Isolation, DIP-16
ILQ615-2-X019T	VISHAY	获取价格	Transistor Output Optocoupler, 4-Element, 5300V Isolation, DIP-16

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