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ILQ5

更新时间： 2024-11-12 22:33:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体光电晶体管光电晶体管输出元件
页数 文件大小 规格书
4页 72K
描述
PHOTOTRANSISTOR OPTOCOUPLER

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中文翻译

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ILQ5 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：DIP-16Reach Compliance Code：compliant
HTS代码：8541.40.80.00风险等级：5.41
Coll-Emtr Bkdn Voltage-Min：70 V配置：SEPARATE, 4 CHANNELS
标称电流传输比：130%最大暗电源：50 nA
最大正向电流：0.06 A最大绝缘电压：5300 V
JESD-609代码：e0元件数量：4
最高工作温度：100 °C最低工作温度：-40 °C
光电设备类型：TRANSISTOR OUTPUT OPTOCOUPLER端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

ILQ5 数据手册

 浏览型号ILQ5的Datasheet PDF文件第2页浏览型号ILQ5的Datasheet PDF文件第3页浏览型号ILQ5的Datasheet PDF文件第4页 
DUAL CHANNEL ILD1/2/5  
QUAD CHANNEL ILQ1/2/5  
PHOTOTRANSISTOR  
OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• Current Transfer Ratio at I =10 mA  
F
Dual Channel  
ILD/Q1, 20% Min.  
ILD/Q2, 100% Min.  
Pin One I.D.  
1
4
3
2
Anode  
Cathode  
Cathode  
Anode  
1
2
3
4
8
7
6
5
Emitter  
ILD/Q5, 50% Min.  
• High Collector-Emitter Voltage  
.268 (6.81)  
.255 (6.48)  
Collector  
Collector  
Emitter  
ILD/Q1: BV  
=50 V  
CEO  
ILD/Q2, ILD/Q5: BV  
• Field-Effect Stable by TRansparent IOn  
Shield (TRIOS) Isolation Test Voltage, 5300  
=70 V  
CEO  
5
6
7
8
.390 (9.91)  
.379 (9.63)  
.305 Typ.  
(7.75) Typ.  
VAC  
.045 (1.14)  
.030 (.76)  
RMS  
•
•
Underwriters Lab File #E52744  
.150 (3.81)  
.130 (3.30)  
VE  
VDE 0884 Available with Option 1  
D
.135 (3.43)  
.115 (2.92)  
4° Typ.  
10 ° Typ.  
3°–9°  
Maximum Ratings (Each Channel)  
.040 (1.02)  
.030 (.76 )  
.022 (.56)  
.018 (.46)  
Emitter  
.012 (.30)  
.008 (.20)  
.100 (2.54) Typ.  
Reverse Voltage ................................................6 V  
Forward Current ...........................................60 mA  
Surge Current................................................. 2.5 A  
Power Dissipation.......................................100 mW  
Derate Linearly from 25°C ..................... 1.3 mW/°C  
Quad Channel  
Pin One I.D.  
Anode  
Cathode  
Cathode  
Anode  
1
2
3
4
5
6
7
8
16 Emitter  
15 Collector  
14 Collector  
13 Emitter  
12 Emitter  
11 Collector  
.268 (6.81)  
.255 (6.48)  
Detector  
Collector-Emitter Reverse Voltage  
Anode  
Cathode  
Cathode  
Anode  
ILD/Q1 ........................................................... 50 V  
ILD/Q2, ILD/Q5...............................................70 V  
Collector Current .......................................... 50 mA  
Collector Current (t<1 ms)...........................400 mA  
Power Dissipation.......................................200 mW  
Derate Linearly from 25°C ......................2.6 mW/°C  
Collector  
Emitter  
10  
9
.790 (20.07)  
.779 (19.77 )  
.305 Typ.  
(7.75) Typ.  
.150 (3.81)  
.130 (3.30)  
.045 (1.14)  
.030 (.76)  
.135 (3.43)  
.115 (2.92)  
Package  
4° Typ.  
10 ° Typ.  
3°–9°  
.012 (.30)  
.008 (.20)  
Isolation Test Voltage (between  
emitter and detector referred to  
standard climate 23°C/50%RH,  
.040 (1.02)  
.030 (.76 )  
.022 (.56)  
.018 (.46)  
.100 (2.54) Typ.  
DIN 50014) .................................... 5300 VAC  
RMS  
Creepage ............................................... min. 7 mm  
Clearance ............................................... min. 7 mm  
DESCRIPTION  
Isolation Resistance  
12  
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared  
LEDs and silicon NPN phototransistor. Signal information, including a DC  
level, can be transmitted by the drive while maintaining a high degree of  
electrical isolation between input and output. The ILD/Q1/2/5 are especially  
designed for driving medium-speed logic and can be used to eliminate trou-  
blesome ground loop and noise problems. Also these couplers can be  
used to replace relays and transformers in many digital interface applica-  
tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a  
single DIP package and the ILQ1/2/5 has four isolated channels per pack-  
age.  
V =500 V, T =25°C ......................... R =10  
Ω
Ω
IO  
A
IO  
11  
V =500 V, T =100°C ....................... R =10  
IO  
A
IO  
Package Power Dissipation ...................... 250 mW  
Derate Linearly from 25°C ..................... 3.3 mW/°C  
Storage Temperature ................... –40°C to +150°C  
Operating Temperature ................–40°C to +100°C  
Junction Temperature .................................... 100°C  
Soldering Temperature  
(2 mm from case bottom) .......................... 260°C  
See Appnote 45, “How to Use Optocoupler Normalized Curves.”  
5–1  
1234

中文翻译

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