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ILD615-3 PDF预览

ILD615-3

更新时间: 2024-11-28 22:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体光电晶体管光电晶体管输出元件
页数 文件大小 规格书
5页 99K
描述
PHOTOTRANSISTOR OPTOCOUPLER

ILD615-3 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DIP-8Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.5
其他特性:UL APPROVEDColl-Emtr Bkdn Voltage-Min:70 V
配置:SEPARATE, 2 CHANNELS标称电流传输比:150%
最大暗电源:100 nA最大正向电流:0.06 A
最大绝缘电压:5300 VJESD-609代码:e0
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

ILD615-3 数据手册

 浏览型号ILD615-3的Datasheet PDF文件第2页浏览型号ILD615-3的Datasheet PDF文件第3页浏览型号ILD615-3的Datasheet PDF文件第4页浏览型号ILD615-3的Datasheet PDF文件第5页 
DUAL CHANNEL ILD615  
QUAD CHANNEL ILQ615  
PHOTOTRANSISTOR OPTOCOUPLER  
FEATURES  
• Identical Channel to Channel Footprint  
• Current Transfer Ratio (CTR) Range at  
I =10 mA  
F
Dimensions in inches (mm)  
ILD/Q615-1: 40 – 80% Min.  
ILD/Q615-2: 63 – 125% Min.  
ILD/Q615-3: 100 – 200% Min.  
ILD/Q615-4: 160 – 320% Min.  
Pin One I.D.  
Anode  
4
3
2
1
1
2
3
4
8
7
6
5
Collector  
Emitter  
.268 (6.81)  
.255 (6.48)  
Cathode  
Anode  
• Guaranteed CTR at I =1 mA  
F
Collector  
Emitter  
ILD/Q615-1: 13% Min.  
ILD/Q615-2: 22% Min.  
5
6
7
8
Cathode  
.390 (9.91)  
.379 (9.63)  
ILD/Q615-3: 34% Min.  
.150 (3.81)  
.130 (3.30)  
.305 Typ.  
(7.75) Typ.  
ILD/Q615-4: 56% Min.  
• High Collector-Emitter Voltage BV  
.045 (1.14)  
.030 (.76)  
=70 V  
CEO  
• Dual and Quad Packages Feature:  
.135 (3.43)  
.115 (2.92)  
4°  
-
-
-
-
Reduced Board Space  
Lower Pin and Parts Count  
Better Channel to Channel CTR Match  
Improved Common Mode Rejection  
10 ° Typ.  
Typ.  
.040 (1.02)  
.030 (.76 )  
3°–9°  
.012 (.30)  
.008 (.20)  
.022 (.56)  
.018 (.46)  
.100 (2.54) Typ.  
• Field-Effect Stable byTRIOS (TRansparent IOn  
Shield)  
• Isolation Test Voltage from Double Molded  
1
16  
15  
14  
13  
Collector  
Emitter  
Pin  
One  
I.D.  
Anode  
2
Cathode  
Package, 5300 VAC  
RMS  
Collector  
Emitter  
3
4
5
6
7
8
Anode  
Cathode  
Anode  
• UL Approval #E52744  
• VDE #0884 Available with Option 1  
.268 (6.81)  
.255 (6.48)  
12 Collector  
11 Emitter  
Maximum Ratings (Each Channel)  
Cathode  
Anode  
Emitter  
Collector  
10  
.790 (20.07)  
.779 (19.77 )  
Reverse Voltage ................................................ 6 V  
Forward Current ........................................... 60 mA  
Surge Current .................................................1.5 A  
Power Dissipation ...................................... 100 mW  
Derate Linearly from 25°C ................... 1.33 mW/°C  
Emitter  
9
Cathode  
.305 Typ.  
(7.75) Typ.  
.045 (1.14)  
.030 (.76)  
.150 (3.81)  
.130 (3.30)  
.135 (3.43)  
.115 (2.92)  
4°  
Typ.  
10 ° Typ.  
3°–9°  
Detector  
.040 (1.02)  
.030 (.76 )  
Collector-Emitter Reverse Voltage .................. 70 V  
Emitter-Collector Reverse Voltage .................... 7 V  
Collector Current.......................................... 50 mA  
Collector Current (t <1 ms) .........................100 mA  
Power Dissipation ...................................... 150 mW  
Derate Linearly from 25°C........................ 2 mW/°C  
.022 (.56)  
.018 (.46)  
.012 (.30)  
.008 (.20)  
.100 (2.54) Typ.  
DESCRIPTION  
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs  
IRLED emitters and high gain NPN phototransistors. These devices are con-  
structed using over/under leadframe optical coupling and double molded  
Package  
Storage Temperature................... –55°C to +150°C  
Operating Temperature ............... –55°C to +100°C  
Junction Temperature.................................... 100°C  
Soldering Temperature  
insulation technology resulting a Withstand Test Voltage of 7500 VAC  
PEAK  
and a Working Voltage of 1700 VAC  
.
RMS  
The binned min./max. and linear CTR characteristics combined with the  
TRIOS (TRansparent IOn Shield) eld-effect process make these devices  
well suited for DC or AC voltage detection. Eliminating the phototransistor  
base connection provides added electrical noise immunity from the tran-  
sients found in many industrial control environments.  
(2 mm distance from case bottom) ........... 260°C  
Package Power Dissipation, ILD615.......... 400 mW  
Derate Linearly from 25°C.................. 5.33 mW/°C  
Package Power Dissipation, ILQ615 ......... 500 mW  
Derate Linearly from 25°C................. 6.67 mW/°C  
Isolation Test Voltage (t=1 sec.)........ 5300 VAC  
Creepage ............................................... 7 mm min.  
Clearance............................................... 7 mm min.  
Because of guaranteed maximum non-saturated and saturated switching  
characteristics, the ILD/Q615 can be used in medium speed data I/O and  
control systems. The binned min./max. CTR specication allow easy worst  
case interface calculations for both level detection and switching applica-  
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at  
RMS  
Isolation Resistance  
12  
V =500 V, T =25°C ............................... 10  
IO  
A
11  
V =500 V, T =100°C ............................. 10  
an I =1 mA.  
IO  
A
F
See Appnote 45, How to Use Optocoupler Normalized Curves.”  
5–1  

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