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ILD620B PDF预览

ILD620B

更新时间: 2024-11-28 22:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体光电晶体管光电晶体管输入元件
页数 文件大小 规格书
4页 80K
描述
AC INPUT PHOTOTRANSISTOR OPTOCOUPLER

ILD620B 数据手册

 浏览型号ILD620B的Datasheet PDF文件第2页浏览型号ILD620B的Datasheet PDF文件第3页浏览型号ILD620B的Datasheet PDF文件第4页 
DUAL CHANNEL ILD620/620GB  
QUAD CHANNEL ILQ620/620GB  
AC INPUT PHOTOTRANSISTOR  
OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• Identical Channel to Channel Footprint  
ILD620 Crosses to TLP620-2  
ILQ620 Crosses to TLP620-4  
• Current Transfer Ratio (CTR) at I = ±5 mA  
ILD/Q620: 50% Min.  
Pin One I.D.  
K=Cathode  
4
5
3
2
1
1
2
3
4
8
7
6
5
Collector  
Emitter  
A/K  
A/K  
A/K  
A/K  
.268 (6.81)  
.255 (6.48)  
F
Collector  
Emitter  
ILD/Q620GB: 100% Min.  
6
7
8
Saturated Current Transfer Ratio (CTR  
)
.390 (9.91)  
.379 (9.63)  
SAT  
at I = ±1 mA  
F
ILD/Q620: 60% Typ.  
ILD/Q620GB: 30% Min.  
.305 Typ.  
(7.75) Typ.  
.045 (1.14)  
.030 (.76)  
.150 (3.81)  
.130 (3.30)  
High Collector-Emitter Voltage, BV  
Dual and Quad Packages Feature:  
=70 V  
.135 (3.43)  
.115 (2.92)  
CEO  
4° Typ.  
10 ° Typ.  
3°–9°  
.012 (.30)  
.008 (.20)  
-
-
-
-
Reduced Board Space  
Lower Pin and Parts Count  
Better Channel to Channel CTR Match  
Improved Common Mode Rejection  
.040 (1.02)  
.030 (.76 )  
.022 (.56)  
.018 (.46)  
.100 (2.54) Typ.  
K=Cathode  
• Field-Effect Stable by TRIOS  
(TRansparent IOn Shield)  
• Isolation Test Voltage from Double Molded  
Package  
• Underwriters Lab File #E52744  
• VDE 0884 Available with Option 1  
1
16  
15  
14  
13  
Collector  
Emitter  
A/K  
A/K  
A/K  
A/K  
A/K  
A/K  
A/K  
A/K  
2
3
4
5
6
7
8
Pin One I.D.  
Collector  
Emitter  
.268 (6.81)  
.255 (6.48)  
12 Collector  
11 Emitter  
Maximum Ratings (Each Channel)  
Collector  
Emitter  
10  
9
.790 (20.07)  
.779 (19.77 )  
Emitter  
Forward Current .........................................±60 mA  
Surge Current............................................... ±1.5 A  
Power Dissipation ...................................... 100 mW  
Derate from 25°C .................................. 1.3 mW/°C  
.305 Typ.  
.150 (3.81)  
.130 (3.30)  
.045 (1.14)  
.030 (.76)  
(7.75) Typ.  
.135 (3.43)  
.115 (2.92)  
4° Typ.  
Detector  
10 ° Typ.  
3°–9°  
.012 (.30)  
.008 (.20)  
.040 (1.02)  
.030 (.76 )  
Collector-Emitter Breakdown Voltage ............. 70 V  
Collector Current.......................................... 50 mA  
Collector Current (t <1 ms) ......................... 100 mA  
Power Dissipation ...................................... 150 mW  
Derate from 25°C ..................................... 2 mW/°C  
.022 (.56)  
.018 (.46)  
.100 (2.54) Typ.  
DESCRIPTION  
Package  
Isolation Test Voltage(t=1 sec.)......... 5300 VAC  
The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor  
optocouplers that use inverse parallel GaAs IRLED emitters and high gain  
NPN silicon phototransistors per channel. These devices are constructed  
using over/under leadframe optical coupling and double molded insulation  
RMS  
Package Dissipation, ILD620/GB ............. 400 mW  
Derate from 25°C ............................... 5.33 mW/°C  
Package Dissipation, ILQ620/GB............. 500 mW  
Derate from 25°C ............................... 6.67 mW/°C  
Creepage ................................................7 mm min.  
Clearance ...............................................7 mm min.  
resulting in a Withstand Test Voltage of 7500 VAC  
.
PEAK  
The LED parameters and the linear CTR characteristics combined with the  
TRIOS eld-effect process make these devices well suited for AC voltage  
Isolation Resistance  
detection. The ILD/Q620GB with its low IF guaranteed CTR  
minimizes  
CEsat  
12  
V =500 V, T =25°C ................................10  
IO  
A
power dissipation of the AC voltage detection network that is placed in  
series with the LEDs. Eliminating the phototransistor base connection pro-  
vides added electrical noise immunity from the transients found in many  
industrial control environments.  
11  
V =500 V, T =100°C .............................10  
IO  
A
Storage Temperature .................. –55°C to +150°C  
Operating Temperature ............... –55°C to +100°C  
Junction Temperature ................................... 100°C  
Soldering Temperature  
(2 mm from case bottom).......................... 260°C  
5–1  

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