DUAL CHANNEL ILD615
QUAD CHANNEL ILQ615
PHOTOTRANSISTOR OPTOCOUPLER
FEATURES
• Identical Channel to Channel Footprint
• Current Transfer Ratio (CTR) Range at
I =10 mA
F
Dimensions in inches (mm)
ILD/Q615-1: 40 – 80% Min.
ILD/Q615-2: 63 – 125% Min.
ILD/Q615-3: 100 – 200% Min.
ILD/Q615-4: 160 – 320% Min.
Pin One I.D.
Anode
4
3
2
1
1
2
3
4
8
7
6
5
Collector
Emitter
.268 (6.81)
.255 (6.48)
Cathode
Anode
• Guaranteed CTR at I =1 mA
F
Collector
Emitter
ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
5
6
7
8
Cathode
.390 (9.91)
.379 (9.63)
ILD/Q615-3: 34% Min.
.150 (3.81)
.130 (3.30)
.305 Typ.
(7.75) Typ.
ILD/Q615-4: 56% Min.
• High Collector-Emitter Voltage BV
.045 (1.14)
.030 (.76)
=70 V
CEO
• Dual and Quad Packages Feature:
.135 (3.43)
.115 (2.92)
4°
-
-
-
-
Reduced Board Space
Lower Pin and Parts Count
Better Channel to Channel CTR Match
Improved Common Mode Rejection
10 ° Typ.
Typ.
.040 (1.02)
.030 (.76 )
3°–9°
.012 (.30)
.008 (.20)
.022 (.56)
.018 (.46)
.100 (2.54) Typ.
• Field-Effect Stable byTRIOS (TRansparent IOn
Shield)
• Isolation Test Voltage from Double Molded
1
16
15
14
13
Collector
Emitter
Pin
One
I.D.
Anode
2
Cathode
Package, 5300 VAC
RMS
Collector
Emitter
3
4
5
6
7
8
Anode
Cathode
Anode
• UL Approval #E52744
• VDE #0884 Available with Option 1
.268 (6.81)
.255 (6.48)
12 Collector
11 Emitter
Maximum Ratings (Each Channel)
Cathode
Anode
Emitter
Collector
10
.790 (20.07)
.779 (19.77 )
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current .................................................1.5 A
Power Dissipation ...................................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Emitter
9
Cathode
.305 Typ.
(7.75) Typ.
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.135 (3.43)
.115 (2.92)
4°
Typ.
10 ° Typ.
3°–9°
Detector
.040 (1.02)
.030 (.76 )
Collector-Emitter Reverse Voltage .................. 70 V
Emitter-Collector Reverse Voltage .................... 7 V
Collector Current.......................................... 50 mA
Collector Current (t <1 ms) .........................100 mA
Power Dissipation ...................................... 150 mW
Derate Linearly from 25°C........................ 2 mW/°C
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.100 (2.54) Typ.
DESCRIPTION
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con-
structed using over/under leadframe optical coupling and double molded
Package
Storage Temperature................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
insulation technology resulting a Withstand Test Voltage of 7500 VAC
PEAK
and a Working Voltage of 1700 VAC
.
RMS
The binned min./max. and linear CTR characteristics combined with the
TRIOS (TRansparent IOn Shield) field-effect process make these devices
well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran-
sients found in many industrial control environments.
(2 mm distance from case bottom) ........... 260°C
Package Power Dissipation, ILD615.......... 400 mW
Derate Linearly from 25°C.................. 5.33 mW/°C
Package Power Dissipation, ILQ615 ......... 500 mW
Derate Linearly from 25°C................. 6.67 mW/°C
Isolation Test Voltage (t=1 sec.)........ 5300 VAC
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at
RMS
Isolation Resistance
12
V =500 V, T =25°C ............................... ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C ............................. ≥10
an I =1 mA.
IO
A
F
See Appnote 45, “How to Use Optocoupler Normalized Curves.”
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