Datasheet > ILD610

ILD610

更新时间： 2024-11-27 22:29:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体光电晶体管光电晶体管
页数	文件大小	规格书
3页	62K
描述
DUAL PHOTOTRANSISTOR OPTOCOUPLER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ILD610 数据手册

ILD610 SERIES

DUAL PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

Dimensions in inches (mm)

• Dual Version of SFH610 Series

• High Current Transfer Ratios

ILD610-1, 40-80%

ILD610-2, 63-125%

ILD610-3, 100-200%

ILD610-4, 160-320%

Pin One I.D.

Anode

Cathode

Anode

Emitter

.268 (6.81)

.255 (6.48)

Collector

Emitter

• Isolation Test Voltage, 5300 V

RMS

Cathode

Collector

• V

0.25 (≤0.4) V at I =10 mA, I =2.5 mA

F C

=70 V

.390 (9.91)

.379 (9.63)

CEsat

CEO

• Underwriters Lab File #E52744

.305 Typ.

(7.75) Typ.

.045 (1.14)

.030 (.76)

.150 (3.81)

.130 (3.30)

V_E

•

VDE #0884 Available with Option 11

DESCRIPTION

.135 (3.43)

.115 (2.92)

The ILD610 Series is a dual channel optocoupler

series for high density applications. Each channel

consists of an optically coupled pair with a Gallium

Arsenide infrared LED and a silicon NPN pho-

totransistor. Signal information, including a DC

level, can be transmitted by the device while main-

taining a high degree of electrical isolation between

input and output. The ILD610 Series is the dual ver-

sion of SFH610 Series and uses a repetitive pin-out

conﬁguration instead of the more common alternat-

ing pin-out used in most dual couplers.

4° Typ.

10 ° Typ.

3°–9°

.040 (1.02)

.030 (.76 )

.022 (.56)

.018 (.46)

.012 (.30)

.008 (.20)

.100 (2.54) Typ.

Electrical Characteristics (T =25°C)

Symbol

Typ.

Unit

Condition

Emitter

Maximum Ratings (Each Channel)

Forward Voltage

1.25

I =60mA

Emitter

(≤1.65)

0.01 (≤10)

Reverse Voltage .................................................6 V

Surge Forward Current (t £10 ms)...................1.5 A

Total Power Dissipation ..............................100 mW

Derate Linearly from 25°C ......................1.3 mW/°C

DC Forward Current ......................................60 mA

Reverse Current

Capacitance

µA

V =6V

V =0 V,

f=1 MHz

Detector

Collector-Emitter Voltage ..................................70 V

Collector Current ..........................................50 mA

Collector Current (t ≤1 ms)..........................100 mA

Total Power Dissipation ..............................150 mW

Derate Linearly from 25°C ......................2.0 mW/°C

Breakdown Voltage

Collector-Emitter

Emitter-Collector

90 (≥70)

I =10 µA

CEO

7.0 (≥6.0)

I =10 µA

CEO

Collector-Emitter Dark

Current

2 (≤50)

=10 V

CEO

Package

Capacitance

=5 V,

Isolation Test Voltage (t=1 sec.) ........ 5300 VAC

Isolation Resistance

RMS

f=1 MHz

Package

V =500 V, T =25°C ............................... ≥10

Ω

V =500 V, T =100°C ............................. ≥10

Collector-Emitter Saturation

Voltage

0.25

(≤0.40)

I =10 mA,

I =2.5 mA

CEsat

Storage Temperature ...................–55°C to +150°C

Operating Temperature ...............–55°C to +100°C

Junction Temperature ................................... 100°C

Lead Soldering Time at 260°C .................... 10 sec.

Coupling Capacitance

0.35

5–1

12 3

中文翻译

下载PDF

与ILD610相关器件

型号	品牌	获取价格	描述	数据表
ILD610_08	VISHAY	获取价格	Optocoupler, Phototransistor Output, Dual Channel
ILD610-1	INFINEON	获取价格	DUAL PHOTOTRANSISTOR OPTOCOUPLER
ILD610-1	VISHAY	获取价格	Optocoupler, Phototransistor Output, Dual Channel
ILD610-1-004	ETC	获取价格	Optoelectronic
ILD610-1-009	ETC	获取价格	Optoelectronic
ILD610-1-X001	VISHAY	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD610-1-X006	VISHAY	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD610-1-X007	VISHAY	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD610-1-X007T	VISHAY	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation, DIP-8
ILD610-1-X009	VISHAY	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation, DIP-8

与ILD610相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

ILD610

ILD610 数据手册

与ILD610相关器件

与ILD610相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ILD610

ILD610 数据手册

与ILD610相关器件

与ILD610相关文章

您还可以找

您在本页遇到什么问题？