ILD610 SERIES
DUAL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• Dual Version of SFH610 Series
• High Current Transfer Ratios
ILD610-1, 40-80%
ILD610-2, 63-125%
ILD610-3, 100-200%
ILD610-4, 160-320%
Pin One I.D.
4
3
2
1
8
Anode
Cathode
Anode
8
7
6
5
1
2
3
4
Emitter
.268 (6.81)
.255 (6.48)
Collector
Emitter
5
6
7
• Isolation Test Voltage, 5300 V
RMS
Cathode
Collector
• V
• V
0.25 (≤0.4) V at I =10 mA, I =2.5 mA
F C
=70 V
.390 (9.91)
.379 (9.63)
CEsat
CEO
• Underwriters Lab File #E52744
.305 Typ.
(7.75) Typ.
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
VE
•
VDE #0884 Available with Option 11
D
DESCRIPTION
.135 (3.43)
.115 (2.92)
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
configuration instead of the more common alternat-
ing pin-out used in most dual couplers.
4° Typ.
10 ° Typ.
3°–9°
.040 (1.02)
.030 (.76 )
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.100 (2.54) Typ.
Electrical Characteristics (T =25°C)
A
Symbol
Typ.
Unit
Condition
Emitter
Maximum Ratings (Each Channel)
Forward Voltage
V
1.25
V
I =60mA
Emitter
F
F
(≤1.65)
0.01 (≤10)
25
Reverse Voltage .................................................6 V
Surge Forward Current (t £10 ms)...................1.5 A
Total Power Dissipation ..............................100 mW
Derate Linearly from 25°C ......................1.3 mW/°C
DC Forward Current ......................................60 mA
Reverse Current
Capacitance
I
µA
V =6V
R
R
C
pF
V =0 V,
O
R
f=1 MHz
Detector
Detector
Collector-Emitter Voltage ..................................70 V
Collector Current ..........................................50 mA
Collector Current (t ≤1 ms)..........................100 mA
Total Power Dissipation ..............................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
Breakdown Voltage
Collector-Emitter
Emitter-Collector
BV
90 (≥70)
V
V
I =10 µA
E
CEO
C
BV
7.0 (≥6.0)
I =10 µA
CEO
Collector-Emitter Dark
Current
I
2 (≤50)
nA
pF
V
=10 V
CEO
CE
Package
Capacitance
C
7
V
CE
=5 V,
CE
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
Isolation Resistance
RMS
f=1 MHz
12
11
Package
V =500 V, T =25°C ............................... ≥10
Ω
Ω
IO
A
V =500 V, T =100°C ............................. ≥10
IO
A
Collector-Emitter Saturation
Voltage
V
0.25
(≤0.40)
V
I =10 mA,
F
I =2.5 mA
C
CEsat
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Junction Temperature ................................... 100°C
Lead Soldering Time at 260°C .................... 10 sec.
Coupling Capacitance
C
0.35
pF
C
5–1