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ILD610-1 PDF预览

ILD610-1

更新时间: 2024-11-27 22:29:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体光电晶体管光电晶体管输出元件
页数 文件大小 规格书
3页 62K
描述
DUAL PHOTOTRANSISTOR OPTOCOUPLER

ILD610-1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DIP-8Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.32
Is Samacsys:N其他特性:UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min:70 V配置:SEPARATE, 2 CHANNELS
标称电流传输比:40%最大暗电源:50 nA
最大正向电流:0.06 A最大绝缘电压:5300 V
JESD-609代码:e0元件数量:2
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

ILD610-1 数据手册

 浏览型号ILD610-1的Datasheet PDF文件第2页浏览型号ILD610-1的Datasheet PDF文件第3页 
ILD610 SERIES  
DUAL PHOTOTRANSISTOR  
OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• Dual Version of SFH610 Series  
• High Current Transfer Ratios  
ILD610-1, 40-80%  
ILD610-2, 63-125%  
ILD610-3, 100-200%  
ILD610-4, 160-320%  
Pin One I.D.  
4
3
2
1
8
Anode  
Cathode  
Anode  
8
7
6
5
1
2
3
4
Emitter  
.268 (6.81)  
.255 (6.48)  
Collector  
Emitter  
5
6
7
• Isolation Test Voltage, 5300 V  
RMS  
Cathode  
Collector  
• V  
• V  
0.25 (0.4) V at I =10 mA, I =2.5 mA  
F C  
=70 V  
.390 (9.91)  
.379 (9.63)  
CEsat  
CEO  
• Underwriters Lab File #E52744  
.305 Typ.  
(7.75) Typ.  
.045 (1.14)  
.030 (.76)  
.150 (3.81)  
.130 (3.30)  
VE  
VDE #0884 Available with Option 11  
D
DESCRIPTION  
.135 (3.43)  
.115 (2.92)  
The ILD610 Series is a dual channel optocoupler  
series for high density applications. Each channel  
consists of an optically coupled pair with a Gallium  
Arsenide infrared LED and a silicon NPN pho-  
totransistor. Signal information, including a DC  
level, can be transmitted by the device while main-  
taining a high degree of electrical isolation between  
input and output. The ILD610 Series is the dual ver-  
sion of SFH610 Series and uses a repetitive pin-out  
conguration instead of the more common alternat-  
ing pin-out used in most dual couplers.  
4° Typ.  
10 ° Typ.  
3°–9°  
.040 (1.02)  
.030 (.76 )  
.022 (.56)  
.018 (.46)  
.012 (.30)  
.008 (.20)  
.100 (2.54) Typ.  
Electrical Characteristics (T =25°C)  
A
Symbol  
Typ.  
Unit  
Condition  
Emitter  
Maximum Ratings (Each Channel)  
Forward Voltage  
V
1.25  
V
I =60mA  
Emitter  
F
F
(1.65)  
0.01 (10)  
25  
Reverse Voltage .................................................6 V  
Surge Forward Current (t £10 ms)...................1.5 A  
Total Power Dissipation ..............................100 mW  
Derate Linearly from 25°C ......................1.3 mW/°C  
DC Forward Current ......................................60 mA  
Reverse Current  
Capacitance  
I
µA  
V =6V  
R
R
C
pF  
V =0 V,  
O
R
f=1 MHz  
Detector  
Detector  
Collector-Emitter Voltage ..................................70 V  
Collector Current ..........................................50 mA  
Collector Current (t 1 ms)..........................100 mA  
Total Power Dissipation ..............................150 mW  
Derate Linearly from 25°C ......................2.0 mW/°C  
Breakdown Voltage  
Collector-Emitter  
Emitter-Collector  
BV  
90 (70)  
V
V
I =10 µA  
E
CEO  
C
BV  
7.0 (6.0)  
I =10 µA  
CEO  
Collector-Emitter Dark  
Current  
I
2 (50)  
nA  
pF  
V
=10 V  
CEO  
CE  
Package  
Capacitance  
C
7
V
CE  
=5 V,  
CE  
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC  
Isolation Resistance  
RMS  
f=1 MHz  
12  
11  
Package  
V =500 V, T =25°C ............................... 10  
IO  
A
V =500 V, T =100°C ............................. 10  
IO  
A
Collector-Emitter Saturation  
Voltage  
V
0.25  
(0.40)  
V
I =10 mA,  
F
I =2.5 mA  
C
CEsat  
Storage Temperature ...................–55°C to +150°C  
Operating Temperature ...............–55°C to +100°C  
Junction Temperature ................................... 100°C  
Lead Soldering Time at 260°C .................... 10 sec.  
Coupling Capacitance  
C
0.35  
pF  
C
5–1  

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