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IDT72V24115JG PDF预览

IDT72V24115JG

更新时间: 2024-02-04 22:32:47
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
14页 137K
描述
FIFO, 4KX9, 10ns, Synchronous, CMOS, PQCC32, GREEN, PLASTIC, LCC-32

IDT72V24115JG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.19
最长访问时间:10 ns周期时间:15 ns
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.9954 mm内存密度:36864 bit
内存宽度:9功能数量:1
端子数量:32字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4KX9可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:3.55 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:11.4554 mm
Base Number Matches:1

IDT72V24115JG 数据手册

 浏览型号IDT72V24115JG的Datasheet PDF文件第1页浏览型号IDT72V24115JG的Datasheet PDF文件第2页浏览型号IDT72V24115JG的Datasheet PDF文件第4页浏览型号IDT72V24115JG的Datasheet PDF文件第5页浏览型号IDT72V24115JG的Datasheet PDF文件第6页浏览型号IDT72V24115JG的Datasheet PDF文件第7页 
COMMERCIALANDINDUSTRIAL  
TEMPERATURERANGES  
IDT72V201/72V211/72V221/72V231/72V241/72V251 3.3V CMOS SyncFIFO™  
256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9  
ABSOLUTEMAXIMUMRATINGS(1)  
RECOMMENDEDOPERATING  
CONDITIONS  
Symbol  
Rating  
TerminalVoltagewith  
RespecttoGND  
Com'l & Ind'l  
Unit  
V
(2)  
Symbol  
Parameter  
Min.  
Typ. Max. Unit  
VTERM  
–0.5 to +5  
VCC  
SupplyVoltage  
3.0  
3.3  
3.6  
V
Commercial/Industrial  
SupplyVoltage  
InputHighVoltage  
Commercial/Industrial  
InputLowVoltage  
Commercial/Industrial  
TSTG  
IOUT  
StorageTemperature  
DCOutputCurrent  
–55to +125  
–50 to +50  
°C  
GND  
VIH  
0
2.0  
0
0
5.5  
V
V
mA  
NOTE:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions above those indicated in the operational  
sections of the specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
VIL  
TA  
TA  
-0.5  
0
0.8  
70  
85  
V
°C  
°C  
OperatingTemperature  
Commercial  
2. VCC terminal only.  
OperatingTemperature  
Industrial  
-40  
DCELECTRICALCHARACTERISTICS  
(Commercial: VCC = 3.3V ± 0.3V, TA = 0°C to +70°C;Industrial: VCC = 3.3V ± 0.3V, TA = -40°C to +85°C)  
IDT72V201  
IDT72V211  
IDT72V221  
IDT72V231  
IDT72V241  
IDT72V251  
Commercial and Industrial(1)  
tCLK = 10, 15, 20 ns  
Typ.  
Symbol  
Parameter  
InputLeakageCurrent(AnyInput)  
OutputLeakageCurrent  
Min.  
–1  
Max.  
1
Unit  
µA  
µA  
V
(2)  
ILI  
(3)  
ILO  
–10  
2.4  
10  
0.4  
20  
5
VOH  
VOL  
Output Logic 1Voltage, IOH = –2mA  
Output Logic 0Voltage, IOL = 8mA  
Active Power Supply Current  
StandbyCurrent  
V
(4,5,6)  
ICC1  
mA  
mA  
(4,7)  
ICC2  
NOTES:  
1. Industrial temperature range product for the 15ns speed grade is available as a standard device. All other speed grades are available by special order.  
2. Measurements with 0.4 VIN VCC.  
3. OE VIH, 0.4 VOUT VCC.  
4. Tested with outputs disabled (IOUT = 0).  
5. RCLK and WCLK toggle at 20 MHz and data inputs switch at 10 MHz.  
6. Typical ICC1 = 0.17 + 0.48*fS + 0.02*CL*fS (in mA) with VCC = 3.3V, TA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fS/2,  
CL = capacitive load (in pF).  
7. All Inputs = VCC - 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.  
CAPACITANCE (TA = +25°C, f = 1.0MHz)  
Symbol  
Parameter  
Conditions  
Max.  
Unit  
(2)  
CIN  
InputCapacitance  
VIN = 0V  
10  
pF  
(1,2)  
COUT  
OutputCapacitance  
VOUT = 0V  
10  
pF  
NOTES:  
1. With output deselected (OE VIH).  
2. Characterized values, not currently tested.  
FEBRUARY8,2006  
3

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