Datasheet > IDT71V3577S

IDT71V3577S

更新时间： 2024-11-10 23:10:11

品牌	Logo	应用领域
艾迪悌 - IDT		计数器静态存储器
页数	文件大小	规格书
22页	522K
描述
128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT71V3577S 数据手册

IDT71V3577S

IDT71V3579S

IDT71V3577SA

IDT71V3579SA

128K X 36, 256K X 18

3.3V Synchronous SRAMs

3.3V I/O, Flow-Through Outputs

Burst Counter, Single Cycle Deselect

Description

Features

◆

The IDT71V3577/79 are high-speed SRAMs organized as

128Kx36/256Kx18.TheIDT71V3577/79SRAMs containwrite,data,

address andcontrolregisters.Therearenoregisters inthedataoutput

path(flow-througharchitecture).InternallogicallowstheSRAMtogen-

erateaself-timedwritebaseduponadecisionwhichcanbeleftuntilthe

endofthe write cycle.

128K x 36, 256K x 18 memory configurations

◆

Supports fast access times:

Commercial:

– 7.5ns up to 117MHz clock frequency

CommercialandIndustrial:

– 8.0ns up to 100MHz clock frequency

– 8.5ns up to 87MHz clock frequency

LBO input selects interleaved or linear burst mode

Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite

enable (BWE), and byte writes (BWx)

3.3V core power supply

Power down controlled by ZZ input

3.3V I/O

Theburstmodefeatureoffersthehighestlevelofperformancetothe

systemdesigner,astheIDT71V3577/79canprovidefourcyclesofdata

forasingleaddress presentedtotheSRAM. Aninternalburstaddress

counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe

accesssequence.Thefirstcycleofoutputdatawillflow-throughfromthe

arrayafteraclock-to-dataaccesstimedelayfromtherisingclockedgeof

the same cycle. If burst mode operation is selected (ADV=LOW), the

subsequentthreecyclesofoutputdatawillbeavailabletotheuseronthe

next three rising clock edges. The order of these three addresses are

definedbytheinternalburstcounterandtheLBO inputpin.

◆

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

◆

Packaged in a JEDEC Standard 100-pin plastic thin quad

The IDT71V3577/79 SRAMs utilize IDT’s latest high-performance

CMOSprocessandarepackagedinaJEDECstandard14mmx20mm

100-pinthinplasticquadflatpack(TQFP)aswellasa119ballgridarray

(BGA) and a 165 fine pitch ball grid array (fBGA).

flatpack(TQFP),119ballgridarray(BGA)and165finepitchball

grid array

PinDescriptionSummary

A⁰-A¹⁷

Address Inputs

Input

Synchronous

Asynchronous

Synchronous

Chip Enable

CS⁰, CS1

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

BWE

(1)

BW¹, BW², BW³, BW4

CLK

ADV

ADSC

ADSP

LBO

Clock

Input

Output

Input

I/O

N/A

Synchronous

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

TMS

TDI

Synchronous

N/A

TCK

TDO

Test Clock

Test Data Output

Synchronous

Asynchronous

Synchronous

N/A

JTAG Reset (Optional)

Sleep Mode

TRST

I/O⁰-I/O³¹, I/O^P1-I/O^P4

V^DD, V^DDQ

Data Input / Output

Core Power, I/O Power

Ground

Supply

V^SS

N/A

NOTE:

5280 tbl 01

1. BW3 and BW4 are not applicable for the IDT71V3579.

FEBRUARY 2005

DSC-5280/08

12 3 4 5 6 7...22

中文翻译

下载PDF

与IDT71V3577S相关器件

型号	品牌	获取价格	描述	数据表
IDT71V3577S75BG8	IDT	获取价格	Cache SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V3577S75BGG	IDT	获取价格	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3577S75BGGI	IDT	获取价格	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3577S75BGI8	IDT	获取价格	Cache SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V3577S75BQ8	IDT	获取价格	Cache SRAM, 128KX36, 7.5ns, CMOS, PBGA165, FBGA-165
IDT71V3577S75BQG	IDT	获取价格	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3577S75BQGI	IDT	获取价格	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3577S75PF9	IDT	获取价格	Cache SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
IDT71V3577S75PFG	IDT	获取价格	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,
IDT71V3577S75PFG8	IDT	获取价格	Cache SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TQFP-100

与IDT71V3577S相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT71V3577S

IDT71V3577S 数据手册

与IDT71V3577S相关器件

与IDT71V3577S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT71V3577S

IDT71V3577S 数据手册

与IDT71V3577S相关器件

与IDT71V3577S相关文章

您还可以找

您在本页遇到什么问题？