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IDT71V3559S85BQ

更新时间： 2024-11-13 23:08:19
品牌 Logo 应用领域
艾迪悌 - IDT 计数器静态存储器
页数 文件大小 规格书
28页 997K
描述
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

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IDT71V3559S85BQ 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：BGA
包装说明：TBGA, BGA165,11X15,40针数：165
Reach Compliance Code：not_compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.26
最长访问时间：8.5 ns其他特性：FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：90 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165JESD-609代码：e0
长度：15 mm内存密度：4718592 bit
内存集成电路类型：ZBT SRAM内存宽度：18
湿度敏感等级：3功能数量：1
端子数量：165字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：256KX18输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装等效代码：BGA165,11X15,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：225电源：3.3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.04 A最小待机电流：3.14 V
子类别：SRAMs最大压摆率：0.225 mA
最大供电电压 (Vsup)：3.465 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn63Pb37)端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：20宽度：13 mm
Base Number Matches：1

IDT71V3559S85BQ 数据手册

 浏览型号IDT71V3559S85BQ的Datasheet PDF文件第2页浏览型号IDT71V3559S85BQ的Datasheet PDF文件第3页浏览型号IDT71V3559S85BQ的Datasheet PDF文件第4页浏览型号IDT71V3559S85BQ的Datasheet PDF文件第5页浏览型号IDT71V3559S85BQ的Datasheet PDF文件第6页浏览型号IDT71V3559S85BQ的Datasheet PDF文件第7页 
128K x 36, 256K x 18,  
IDT71V3557S  
IDT71V3559S  
IDT71V3557SA  
IDT71V3559SA  
3.3V Synchronous ZBT™ SRAMs  
3.3V I/O, Burst Counter,  
Flow-Through Outputs  
Features  
it read or write.  
◆
128K x 36, 256K x 18 memory configurations  
Supports high performance system speed - 100 MHz  
(7.5 ns Clock-to-Data Access)  
The IDT71V3557/59 contain address, data-in and control signal  
registers.Theoutputsareflow-through(nooutputdataregister).Output  
enable is the only asynchronous signal and can be used to disable the  
outputsatanygiventime.  
A Clock Enable (CEN) pin allows operation of the IDT71V3557/59  
to be suspended as long as necessary. All synchronous inputs are  
ignored when (CEN) is high and the internal device registers will hold  
their previous values.  
Therearethreechipenablepins(CE1,CE2,CE2)thatallowtheuser  
todeselectthedevicewhendesired.Ifanyoneofthesethreeisnotasserted  
when ADV/LD is low, no new memory operation can be  
initiated. However, any pending data transfers (reads or writes) will  
be completed. The data bus will tri-state one cycle after chip is de-  
selectedorawriteisinitiated.  
The IDT71V3557/59 have an on-chip burst counter. In the burst  
mode, the IDT71V3557/59 can provide four cycles of data for a single  
address presented to the SRAM. The order of the burst sequence is  
defined by the LBO input pin. The LBO pin selects between linear and  
interleaved burst sequence. The ADV/LD signal is used to load a new  
externaladdress(ADV/LD=LOW)orincrementtheinternalburstcounter  
(ADV/LD = HIGH).  
◆
◆
◆
ZBTTM Feature - No dead cycles between write and read  
cycles  
Internally synchronized output buffer enable eliminates  
the need to control OE  
Single R/W (READ/WRITE) control pin  
4-word burst capability (Interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
3.3V power supply (±5%), 3.3V (±5%) I/O Supply (VDDQ)  
Optional Boundary Scan JTAG Interface (IEEE 1149.1  
complaint)  
Packaged in a JEDEC Standard 100-pin plastic thin quad  
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine  
pitch ball grid array (fBGA)  
◆
◆
◆
◆
◆
◆
◆
Description  
TheIDT71V3557/59are3.3Vhigh-speed4,718,592-bit(4.5Mega-  
bit)synchronous SRAMs organizedas 128Kx36/256Kx18. Theyare  
designed to eliminate dead bus cycles when turning the bus around  
between reads and writes, or writes and reads. Thus they have been  
given the name ZBTTM, or Zero Bus Turnaround.  
The IDT71V3557/59 SRAMs utilize IDT's latest high-performance  
CMOSprocessandarepackagedinaJEDECstandard14mmx20mm  
100-pin thinplasticquadflatpack(TQFP)aswellasa119 ballgridarray  
(BGA) and a 165 fine pitch ball grid array (fBGA).  
AddressandcontrolsignalsareappliedtotheSRAMduringoneclock  
cycle,andonthenextclockcycletheassociateddatacycleoccurs,be  
PinDescriptionSummary  
A0-A17  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Output  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enables  
CE1, CE2, CE2  
Output Enable  
OE  
R/W  
Read/Write Signal  
Clock Enable  
CEN  
Individual Byte Write Selects  
Clock  
BW1, BW2, BW3, BW4  
CLK  
ADV/LD  
Advance burst address / Load new address  
Linear / Interleaved Burst Order  
Test Mode Select  
Test Data Input  
Synchronous  
Static  
LBO  
TMS  
Synchronous  
Synchronous  
N/A  
TDI  
TCK  
Te s t Cl o c k  
TDO  
Te s t Data Outp ut  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Static  
JTAG Reset (Optional)  
Sleep Mode  
TRST  
ZZ  
I/O0-I/O31, I/OP1-I/OP4  
VDD, VDDQ  
Data Input / Output  
Core Power, I/O Power  
Ground  
Supply  
Supply  
VSS  
Static  
52 82 tb l 01  
OCTOBER 2004  
1
©2004IntegratedDeviceTechnology,Inc.  
DSC-5282/07  
1234567...28

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与IDT71V3559S85BQ相关器件

型号 品牌 获取价格 描述 数据表
IDT71V3559S85BQG IDT

获取价格

 		Synchronous ZBT SRAMs
IDT71V3559S85BQGI IDT

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 		Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FBGA-165
IDT71V3559S85BQI IDT

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 		128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Out
IDT71V3559S85PF IDT

获取价格

 		128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Out
IDT71V3559S85PF8 IDT

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 		ZBT SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
IDT71V3559S85PF9 IDT

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 		ZBT SRAM, 256KX18, 8.5ns, CMOS, PQFP100, PLASTIC, TQFP-100
IDT71V3559S85PFG IDT

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 		Synchronous ZBT SRAMs
IDT71V3559S85PFG8 IDT

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 		Cache SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLA
IDT71V3559S85PFGI IDT

获取价格

 		Synchronous ZBT SRAMs
IDT71V3559S85PFI IDT

获取价格

 		128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Out

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