Datasheet > IDT71V2579S80PFI9

IDT71V2579S80PFI9

更新时间： 2024-11-26 06:09:23

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
22页	625K
描述
Cache SRAM, 256KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100

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IDT71V2577S

IDT71V2579S

IDT71V2577SA

IDT71V2579SA

128K x 36, 256K x 18

3.3V Synchronous SRAMs

2.5V I/O, Flow-Through Outputs

Burst Counter, Single Cycle Deselect

Description

Features

◆

The IDT71V2577/79 are high-speed SRAMs organized as

128Kx36/256Kx18.TheIDT71V2577/79SRAMs containwrite,data,

address andcontrolregisters.Therearenoregisters inthedataoutput

path (flow-through architecture). Internal logic allows the SRAM to

generateaself-timedwritebaseduponadecisionwhichcanbeleftuntil

128K x 36, 256K x 18 memory configurations

◆

Supports fast access times:

Commercial:

– 7.5ns up to 117MHz clock frequency

CommercialandIndustrial:

– 8.0ns up to 100MHz clock frequency

– 8.5ns up to 87MHz clock frequency

LBO input selects interleaved or linear burst mode

Self-timedwritecyclewithglobalwritecontrol(GW),bytewrite

enable (BWE), and byte writes (BWx)

3.3V core power supply

Power down controlled by ZZ input

2.5V I/O

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

Packaged in a JEDEC Standard 100-pin plastic thin quad

flatpack(TQFP),119ballgridarray(BGA)and165finepitchball

grid array (fBGA)

the endofthe write cycle.

Theburstmodefeatureoffersthehighestlevelofperformancetothe

systemdesigner,astheIDT71V2577/79canprovidefourcyclesofdata

fora single address presentedtothe SRAM. Aninternalburstaddress

counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe

accesssequence.Thefirstcycleofoutputdatawillflow-throughfromthe

arrayafteraclock-to-dataaccesstimedelayfromtherisingclockedgeof

the same cycle. If burst mode operation is selected (ADV=LOW), the

subsequentthreecyclesofoutputdatawillbeavailabletotheuseronthe

next three rising clock edges. The order of these three addresses are

definedbytheinternalburstcounterandthe LBO inputpin.

◆

The IDT71V2577/79 SRAMs utilize IDT’s latest high-performance

CMOSprocessandarepackagedinaJEDECstandard14mmx20mm

100-pinthinplasticquadflatpack(TQFP)aswellasa119ballgridarray

(BGA) and a 165 fine pitch ball grid array (fBGA).

PinDescriptionSummary

A0-A17

Address Inputs

Input

Synchronous

Asynchronous

Synchronous

Chip Enable

, CS

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

BWE

BW , BW

, BW

, BW ⁽¹⁾

CLK

Clock

Input

Output

Input

I/O

N/A

Synchronous

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

ADV

ADSC

ADSP

LBO

TMS

TDI

Synchronous

N/A

TCK

TDO

Test Clock

Test Data Output

Synchronous

Asynchronous

Synchronous

N/A

JTAG Reset (Optional)

Sleep Mode

TRST

I/O

-I/O31, I/OP1-I/OP4

DD, VDDQ

Data Input / Output

Core Power, I/O Power

Ground

Supply

N/A

4877 tbl 01

NOTE:

1. BW3 and BW4 are not applicable for the IDT71V2579.

JUNE 2003

DSC-4877/08

12 3 4 5 6 7...22

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与IDT71V2579S80PFI9相关器件

型号	品牌	获取价格	描述	数据表
IDT71V2579S85BG	IDT	获取价格	128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Sin
IDT71V2579S85BGGI	IDT	获取价格	Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA119, BGA-119
IDT71V2579S85BGI	IDT	获取价格	128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Sin
IDT71V2579S85BGI8	IDT	获取价格	Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA119, BGA-119
IDT71V2579S85BQ	IDT	获取价格	128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Sin
IDT71V2579S85BQG	IDT	获取价格	Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA165, FBGA-165
IDT71V2579S85BQI	IDT	获取价格	128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Sin
IDT71V2579S85PF	IDT	获取价格	128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Sin
IDT71V2579S85PF8	IDT	获取价格	Cache SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100
IDT71V2579S85PFGI	IDT	获取价格	暂无描述

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