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IDT7140LA35TFG8 PDF预览

IDT7140LA35TFG8

更新时间: 2024-11-17 05:29:39
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
19页 155K
描述
Multi-Port SRAM, 1KX8, 35ns, CMOS, PQFP64, STQFP-64

IDT7140LA35TFG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LFQFP, QFP64,.47SQ,20针数:64
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.03
最长访问时间:35 ns其他特性:INTERRUPT FLAG
I/O 类型:COMMONJESD-30 代码:S-PQFP-G64
JESD-609代码:e3长度:10 mm
内存密度:8192 bit内存集成电路类型:MULTI-PORT SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:2
端子数量:64字数:1024 words
字数代码:1000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP64,.47SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.0015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:10 mmBase Number Matches:1

IDT7140LA35TFG8 数据手册

 浏览型号IDT7140LA35TFG8的Datasheet PDF文件第2页浏览型号IDT7140LA35TFG8的Datasheet PDF文件第3页浏览型号IDT7140LA35TFG8的Datasheet PDF文件第4页浏览型号IDT7140LA35TFG8的Datasheet PDF文件第5页浏览型号IDT7140LA35TFG8的Datasheet PDF文件第6页浏览型号IDT7140LA35TFG8的Datasheet PDF文件第7页 
IDT7130SA/LA  
IDT7140SA/LA  
HIGH SPEED  
1K X 8 DUAL-PORT  
STATIC SRAM  
Features  
On-chip port arbitration logic (IDT7130 Only)  
High-speed access  
BUSY output flag on IDT7130; BUSY input on IDT7140  
INT flag for port-to-port communication  
– Commercial: 20/25/35/55/100ns (max.)  
Industrial: 25/55/100ns (max.)  
Military: 25/35/55/100ns (max.)  
Fully asynchronous operation from either port  
Battery backup operation–2V data retention (LA only)  
TTL-compatible, single 5V ±10% power supply  
Military product compliant to MIL-PRF-38535 QML  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Available in 48-pin DIP, LCC and Ceramic Flatpack, 52-pin  
PLCC, and 64-pin STQFP and TQFP  
Green parts available, see ordering information  
Low-power operation  
IDT7130/IDT7140SA  
Active: 550mW (typ.)  
Standby: 5mW (typ.)  
IDT7130/IDT7140LA  
Active: 550mW (typ.)  
Standby: 1mW (typ.)  
MASTER IDT7130 easily expands data bus width to 16-or-  
more-bits using SLAVE IDT7140  
Functional Block Diagram  
OER  
OEL  
CE  
R/W  
L
CE  
R/W  
R
L
R
,
I/O0L- I/O7L  
I/O0R-I/O7R  
(1,2)  
I/O  
Control  
I/O  
Control  
(1,2)  
BUSY  
L
BUSYR  
A
9L  
0L  
A
9R  
0R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
A
10  
10  
ARBITRATION  
and  
INTERRUPT  
LOGIC  
CE  
L
CE  
OE  
R/W  
R
R
OEL  
L
R
R/W  
(2)  
(2)  
INT  
R
INTL  
2689 drw 01  
NOTES:  
1. IDT7130 (MASTER): BUSY is open drain output and requires pullup resistor.  
IDT7140 (SLAVE): BUSY is input.  
2. Open drain output: requires pullup resistor.  
APRIL 2006  
1
DSC-2689/13  
©2006IntegratedDeviceTechnology,Inc.  

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