是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64 | 针数: | 64 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.17 |
最长访问时间: | 20 ns | I/O 类型: | COMMON |
JESD-30 代码: | S-PQFP-G64 | JESD-609代码: | e0 |
长度: | 10 mm | 内存密度: | 16384 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 8 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 64 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFQFP | 封装等效代码: | QFP64,.47SQ,20 |
封装形状: | SQUARE | 封装形式: | FLATPACK, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 240 |
电源: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.015 A |
最小待机电流: | 4.5 V | 子类别: | SRAMs |
最大压摆率: | 0.25 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn85Pb15) |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71321SA20TF8 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 20ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64 | |
IDT71321SA20TF9 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 20ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64 | |
IDT71321SA20TFG | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 20ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, GREEN, STQFP-64 | |
IDT71321SA20TFG9 | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 20ns, CMOS, PQFP64, STQFP-64 | |
IDT71321SA20TFI | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT71321SA25J | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT71321SA25JG | IDT |
获取价格 |
暂无描述 | |
IDT71321SA25JGI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQCC52 | |
IDT71321SA25JI | IDT |
获取价格 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS | |
IDT71321SA25JI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQCC52 |