是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | QFP, QFP100,.63SQ,20 |
Reach Compliance Code: | not_compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.36 |
最长访问时间: | 9 ns | 最大时钟频率 (fCLK): | 66 MHz |
I/O 类型: | COMMON | JESD-30 代码: | S-PQFP-G100 |
JESD-609代码: | e0 | 内存密度: | 1179648 bit |
内存集成电路类型: | APPLICATION SPECIFIC SRAM | 内存宽度: | 9 |
湿度敏感等级: | 3 | 端口数量: | 2 |
端子数量: | 100 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX9 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QFP |
封装等效代码: | QFP100,.63SQ,20 | 封装形状: | SQUARE |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 电源: | 3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.002 A |
最小待机电流: | 3 V | 子类别: | SRAMs |
最大压摆率: | 0.24 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn85Pb15) |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 20 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70V9199L9PFI | IDT |
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HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM | |
IDT70V9199L9PFI8 | IDT |
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Dual-Port SRAM, 128KX9, 20ns, CMOS, PQFP100, TQFP-100 | |
IDT70V9269 | IDT |
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HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM | |
IDT70V9269L | IDT |
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HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM | |
IDT70V9269L12PRF | IDT |
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HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM | |
IDT70V9269L12PRF9 | IDT |
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Dual-Port SRAM, 16KX16, 25ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 | |
IDT70V9269L12PRFG8 | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 25ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 | |
IDT70V9269L12PRFGI8 | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 25ns, CMOS, PQFP128, TQFP-128 | |
IDT70V9269L12PRFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM | |
IDT70V9269L12PRFI8 | IDT |
获取价格 |
Dual-Port SRAM, 16KX16, 25ns, CMOS, PQFP128, TQFP-128 |