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IDT7006L20PFGI8 PDF预览

IDT7006L20PFGI8

更新时间: 2024-11-11 21:22:35
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
20页 178K
描述
Dual-Port SRAM, 16KX8, 20ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64

IDT7006L20PFGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LQFP, QFP64,.66SQ,32针数:64
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.05
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G64JESD-609代码:e3
长度:14 mm内存密度:131072 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:2端子数量:64
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP64,.66SQ,32
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.004 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.32 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

IDT7006L20PFGI8 数据手册

 浏览型号IDT7006L20PFGI8的Datasheet PDF文件第2页浏览型号IDT7006L20PFGI8的Datasheet PDF文件第3页浏览型号IDT7006L20PFGI8的Datasheet PDF文件第4页浏览型号IDT7006L20PFGI8的Datasheet PDF文件第5页浏览型号IDT7006L20PFGI8的Datasheet PDF文件第6页浏览型号IDT7006L20PFGI8的Datasheet PDF文件第7页 
HIGH-SPEED  
16K x 8 DUAL-PORT  
STATIC RAM  
IDT7006S/L  
M/S = H for BUSY output flag on Master,  
M/S = L for BUSY input on Slave  
Busy and Interrupt Flags  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
Devices are capable of withstanding greater than 2001V  
electrostatic discharge  
Battery backup operation2V data retention  
TTL-compatible, single 5V (±10%) power supply  
Available in 68-pin PGA, quad flatpack, PLCC, and a 64-pin  
TQFP  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Green parts available, see ordering information  
Features  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
Military:20/25/35/55/70ns(max.)  
Industrial:55ns (max.)  
– Commercial:15/17/20/25/35/55ns(max.)  
Low-power operation  
IDT7006S  
Active:750mW(typ.)  
Standby: 5mW (typ.)  
IDT7006L  
Active:700mW(typ.)  
Standby: 1mW (typ.)  
IDT7006 easily expands data bus width to 16 bits or more  
using the Master/Slave select when cascading more than  
one device  
FunctionalBlockDiagram  
OE  
R
OEL  
CE  
R/W  
R
CE  
L
R/W  
L
R
I/O0L- I/O7L  
I/O0R-I/O7R  
I/O  
I/O  
Control  
Control  
BUSY (1,2)  
L
(1,2)  
BUSY  
R
A
13L  
A
13R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0L  
A
0R  
14  
14  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
R/W  
L
CE  
OE  
R/W  
R
R
L
R
L
SEM  
R
SEM (2)  
L
M/S  
(2)  
INT  
L
INTR  
2739 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
OCTOBER 2008  
1
©2008IntegratedDeviceTechnology,Inc.  
DSC-2739/16  

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