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IDT6167LA20Y PDF预览

IDT6167LA20Y

更新时间: 2024-11-10 22:22:59
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
8页 67K
描述
CMOS STATIC RAM 16K (16K x 1-BIT)

IDT6167LA20Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-20
针数:20Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.91最长访问时间:20 ns
I/O 类型:SEPARATEJESD-30 代码:R-PDSO-J20
JESD-609代码:e0长度:12.8524 mm
内存密度:16384 bit内存集成电路类型:STANDARD SRAM
内存宽度:1功能数量:1
端口数量:1端子数量:20
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16KX1
输出特性:3-STATE可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ20,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified座面最大高度:3.556 mm
最大待机电流:0.00002 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.08 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5184 mm
Base Number Matches:1

IDT6167LA20Y 数据手册

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IDT6167SA  
IDT6167LA  
CMOS STATIC RAM  
16K (16K x 1-BIT)  
Integrated Device Technology, Inc.  
Access times as fast as 15ns are available. The circuit also  
offers a reduced power standby mode. When CSgoes HIGH,  
the circuit will automatically go to, and remain in, a standby  
mode as long as CS remains HIGH. This capability provides  
significant system-level power and cooling savings. The low-  
power (LA) version also offers a battery backup data retention  
capability where the circuit typically consumes only 1µW  
operating off a 2V battery.  
FEATURES:  
• High-speed (equal access and cycle time)  
— Military: 15/20/25/35/45/55/70/85/100ns (max.)  
— Commercial: 15/20/25/35ns (max.)  
• Low power consumption  
• Battery backup operation — 2V data retention voltage  
(IDT6167LA only)  
• Available in 20-pin CERDIP and Plastic DIP, and 20-pin  
SOJ  
• Produced with advanced CMOS high-performance  
technology  
All inputs and the output of the IDT6167 are TTL-compat-  
ible and operate from a single 5V supply, thus simplifying  
system designs.  
TheIDT6167ispackagedinaspace-saving20-pin, 300mil  
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high  
board-level packing densities.  
Military grade product is manufactured in compliance with  
the latest revision of MIL-STD-883, Class B, making it ideally  
suited to military temperature applications demanding the  
highest level of performance and reliability.  
• CMOS process virtually eliminates alpha particle soft-  
error rates  
• Separate data input and output  
• Military product compliant to MIL-STD-883, Class B  
DESCRIPTION:  
The lDT6167 is a 16,384-bit high-speed static RAM orga-  
nized as 16K x 1. The part is fabricated using IDT’s high-  
performance, high reliability CMOS technology.  
FUNCTIONAL BLOCK DIAGRAM  
A0  
VCC  
GND  
16,384-BIT  
MEMORY ARRAY  
ADDRESS  
DECODE  
A13  
DIN  
DOUT  
I/O CONTROL  
CS  
CONTROL  
LOGIC  
WE  
2981 drw 01  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
MARCH 1996  
1996 Integrated Device Technology, Inc.  
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.  
2981/5  
5.2  
1

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