型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDH10G120C5_15 | INFINEON |
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Silicon Carbide Schottky Diode | |
IDH10G65C5 | INFINEON |
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650V SiC thinQ!⢠Generation 5 diodes | |
IDH10G65C5_12 | INFINEON |
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ThinQ!⢠Generation 5 represents Infineon le | |
IDH10G65C6 | INFINEON |
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CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术 | |
IDH10S120 | INFINEON |
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thinQ!TM SiC Schottky Diode | |
IDH10S120AKSA1 | INFINEON |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-220A | |
IDH10S60C | INFINEON |
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2ndGeneration thinQ!TM SiC Schottky Diode | |
IDH10S60CXK | INFINEON |
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暂无描述 | |
IDH10SG60C | INFINEON |
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3rd Generation thinQ!TM SiC Schottky Diode | |
IDH10SG60CXKSA1 | INFINEON |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon Carbide, TO-220, |