Datasheet > IDH02G65C5

IDH02G65C5

更新时间： 2024-11-24 12:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
2页	417K
描述
650V SiC thinQ!â¢ Generation 5 diodes

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IDH02G65C5 数据手册

Product Brief

Features

V_brat 650V

650V SiC thinQ!™ Generation 5 diodes

Improved Figure of Merit (Q_cx V_f)

Your way is our way: improve eﬃciency and solution costs

No reverse recovery charge

Soft switching reverse

recovery waveform

Temperature independent

ThinQ!™ Generation 5 represents Inﬁneon’s leading edge technology for

SiC Schottky Barrier diodes. The Inﬁneon proprietary diﬀusion soldering

process, already introduced with G3, is now combined with a new, more

compact design and thin wafer technology. The result is a new family of

products showing improved eﬃciency over all load conditions, coming from

switching behavior

High operating temperature

(T_{j max}175°C)

Improved surge capability

Pb-free lead plating

10 years manufacturing of SiC diodes

both the improved thermal characteristics and a lower ﬁgure of merit (Q_cx V_f)

Beneﬁts

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

Higher safety margin against

Overvoltage; best match with

CoolMOS™ 650V products

Improved eﬃciency over all

98.5

load conditions

Increased eﬃciency compared to

Silicon Diode alternatives

98.0

Reduced EMI compared to snappier

Silicon diode reverse recovery

waveform

Generation 5

Generation 3

Generation 2

97.5

Highly stable switching performance

Reduced cooling requirements

97.0

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

Reduced risks of thermal runaway

Output Power [% nominal]

RoHS compliant

0.15

0.10

High quality know-how and capacity

in SiC diode manufacture

Generation 5

Generation 3

Generation 2

Experimental results

0.05

Eﬃciency comparison among the three

IFX generations of 8A SiC diodes

a) Absolute values

Applications

0.00

Telecom/Server SMPS

b) Referred to thinQ!™ Gen 5

Solar/UPS

- 0.05

- 0.10

- 0.15

PC Silverbox

(CCM PFC, High line, Pout max=1800 W,

f_SW=65 kHz, T_HS=60°C,

LED/LCD TV

MOSFET: IPW60R075CP)

Motor Drives

100%

10%

20%

30%

40%

50%

60%

70%

80%

90%

Output Power [% nominal]

HID lighting

www.inﬁneon.com/sic

中文翻译

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IDH02G65C5 替代型号

型号	品牌	替代类型	描述	数据表
IDH03G65C5	INFINEON	类似代替	650V SiC thinQ!â¢ Generation 5 diodes
IDH10S60C	INFINEON	类似代替	2ndGeneration thinQ!TM SiC Schottky Diode
IDH10S120	INFINEON	类似代替	thinQ!TM SiC Schottky Diode

与IDH02G65C5相关器件

型号	品牌	获取价格	描述	数据表
IDH02SG120	INFINEON	获取价格	3rd Generation thinQ!TM SiC Schottky Diode
IDH02SG120XKSA1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 1200V V(RRM), Silicon Carbide, TO-220AC
IDH03G65C5	INFINEON	获取价格	650V SiC thinQ!â¢ Generation 5 diodes
IDH03G65C5_12	INFINEON	获取价格	ThinQ!â¢ Generation 5 represents Infineon le
IDH03SG60C	INFINEON	获取价格	3rd Generation thinQ!TM SiC Schottky Diode
IDH03SG60CXKSA2	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon Carbide, TO-220, G
IDH04G65C5	INFINEON	获取价格	650V SiC thinQ!â¢ Generation 5 diodes
IDH04G65C5_12	INFINEON	获取价格	ThinQ!â¢ Generation 5 represents Infineon le
IDH04G65C6	INFINEON	获取价格	CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术
IDH04S60C	INFINEON	获取价格	2ndGeneration thinQ!TM SiC Schottky Diode

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