IDC04S60C

更新时间： 2024-09-30 03:02:19

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
4页	58K
描述
2nd generation thinQ! SiC Schottky Diode

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中文翻译

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IDC04S60C 数据手册

IDC04S60C

2^ndgeneration thinQ!^TMSiC Schottky Diode

FEATURES:

Applications:

SMPS, PFC, snubber

Revolutionary semiconductor material -

Silicon Carbide

Switching behavior benchmark

No reverse recovery

No temperature influence on the switching

behavior

No forward recovery

High surge current capability

Chip Type

V_BR

I_F

Die Size

Package

1.146 x 0.968 mm²

sawn on foil

IDC04S60C

600V

MECHANICAL PARAMETER:

Raster size

1.146x 0.968

Anode pad size

Area total / active

Thickness

0.909 x 0.731

1.11 / 0.74

mm²

µm

355

Wafer size

deg

Flat position

Max. possible chips per wafer

Passivation frontside

Anode metalization

3461 pcs

Photoimide

3200 nm Al

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Cathode metalization

Die bond

Electrically conductive glue or solder

Wire bond

Al, £ 350µm

Æ ³ 0.3 mm

Reject Ink Dot Size

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006

12 3 4

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