Datasheet > IDB12E120_07

IDB12E120_07

更新时间： 2024-09-30 11:14:59

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
8页	208K
描述
Fast Switching EmCon Diode

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中文翻译

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IDB12E120_07 数据手册

IDB12E120

Fast Switching EmCon Diode

Product Summary

Feature

1200

RRM

• 1200 V EmCon technology

• Fast recovery

1.65

150

• Soft switching

°C

jmax

• Low reverse recovery charge

• Low forward voltage

• Easy paralleling

PG-TO263-3-2

* RoHS compliant

Type

Package

Ordering Code Marking Pin 1 PIN 2 PIN 3

IDB12E120

PG-TO263-3-2

D12E120 NC

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Repetitive peak reverse voltage

Continous forward current

1200

RRM

T =25°C

T =90°C

Surge non repetitive forward current

FSM

FRM

T =25°C, t =10 ms, sine halfwave

Maximum repetitive forward current

42.5

T =25°C, t limited by T

, D=0.5

jmax

Power dissipation

tot

T =25°C

T =90°C

-55...+150

°C

Operating and storage temperature

T , T

j stg

Soldering temperature

245

reflow soldering, MSL1

Page 1

Rev.2.2

2007-09-01

12 3 4 5 6 7 8

中文翻译

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