Datasheet > ICTE-36CE3/TR12

ICTE-36CE3/TR12

更新时间： 2024-11-16 15:34:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
3页	221K
描述
Trans Voltage Suppressor Diode, 36V V(RWM), Bidirectional,

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ICTE-36CE3/TR12 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
最大钳位电压：	54.3 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
极性：	BIDIRECTIONAL	最大重复峰值反向电压：	36 V
子类别：	Transient Suppressors	表面贴装：	NO
Base Number Matches：	1

ICTE-36CE3/TR12 数据手册

ICTE-5 thru ICTE-45C, e3

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The ICTE-5 through ICTE-45C series of Transient Voltage

Suppressors (TVSs) are designed for the protection of integrated

circuits that require very low Clamping Voltages (V_C) during a

transient threat. Due to their very fast response time, protection

level and high Peak Pulse Power (P_PP) capability, they are extremely

effective in providing protection against line transients generated by:

voltage reversals, capacitive or inductive load switching,

electromechanical switching, electrostatic discharge and

electromagnetic coupling.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

This series of TVS devices is designed to protect

Bipolar, MOS and Schottky improved integrated

circuits.

•

These transient voltage suppressors are

designed for the protection of integrated

circuits. Characterized by a very low

clamping voltage together with a low standoff

voltage, they afford a high degree of

protection to: TTL, ECL, DTL, MOS, CMOS,

VMOS, HMOS, NMOS and static memory

circuits.

Transient protection for CMOS, MOS, Bipolar,

ICS (TTL, ECL, DTL, RTL and linear functions)

•

5.0 to 45 volts

Low clamping ratio

RoHS Compliant devices available by adding “e3”

suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts of Peak Pulse Power (P_PP)

•

CASE: Void-free, transfer molded

thermosetting epoxy body meeting UL94V-0

dissipation at 25^oC and 10x1000μs

FINISH: Tin-lead or RoHS Compliant matte-

Tin plating solderable per MIL-STD-750,

method 2026

t_clamping(0 volts to V_(BR)min):

<100 ps theoretical for unidirectional and <5 ns

for bidirectional

Operating and Storage temperatures: -65^oC to

•

POLARITY: Cathode connected to case and

marked. Bidirectional not marked.

•

+150^oC.

•

WEIGHT: 1.5 grams (approx.)

MOUNTING POSITION: Any

See package dimension on last page

Forward surge rating: 200 amps, 1/120 second

at 25^oC. (Applies to Unidirectional or single

direction only).

•

Steady State power dissipation: 5 watts.

Repetition rate (duty cycle): .05%

Clamping Factor: 1.33 @ Full rated power.

1.20 @ 50% rated power.

•

Clamping Factor: The ratio of the actual V_C

(Clamping Voltage) to the actual V_(BR)

(Breakdown Votlage) as measured on a

specific device.

7-09-2007 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与ICTE-36CE3/TR12相关器件

型号	品牌	获取价格	描述	数据表
ICTE-36CHR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
ICTE-36CPBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
ICTE-36CRL4	MOTOROLA	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-02, 2 PIN
ICTE-36E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, ROH
ICTE-36G	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
ICTE-36PBF	DIGITRON	获取价格	Trans Voltage Suppressor Diode
ICTE-36RL4	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
ICTE-36RL4	MOTOROLA	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, PLASTIC, CASE 4
ICTE-36RL4G	ONSEMI	获取价格	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
ICTE-36T	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Unidirectional, 1 Element, Silicon

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