Datasheet > IC42S16160B-7TL

IC42S16160B-7TL

更新时间： 2022-05-06 00:01:20

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
62页	768K
描述
256-MBIT SYNCHRONOUS DRAM

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中文翻译

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数据手册

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IC42S16160B-7TL 数据手册

IS42S83200B

IS42S16160B

32Meg x 8, 16Meg x16

256-MBIT SYNCHRONOUS DRAM

SEPTEMBER 2008

OVERVIEW

FEATURES

ISSI's 256Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

The 256Mb SDRAM is organized as follows.

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

V^DD

3.3V 3.3V

VDDQ

IS42S83200B

IS42S16160B

IS42S83200B

IS42S16160B

8M x 8 x 4 Banks 4M x16x4 Banks

3.3V 3.3V

54-pin TSOPII

54-ballBGA

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Auto Refresh (CBR)

KEY TIMING PARAMETERS

• Self Refresh

• 8K refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

Parameter

-6

-7

Unit

Clk Cycle Time

CAS Latency = 3

CAS Latency = 2

• Burst read/write and burst read/single write

operations capability

Clk Frequency

CAS Latency = 3

CAS Latency = 2

166

125

143

100

Mhz

• Burst termination by burst stop and precharge

command

Access Time from Clock

CAS Latency = 3

CAS Latency = 2

• Available in Industrial Temperature

5.4

6.5

5.4

6.5

• Available in 54-pin TSOP-II and 54-ball BGA

(x16 only)

• Available in Lead-free

time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are

advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

07/28/08

12 3 4 5 6 7...62

中文翻译

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与IC42S16160B-7TL相关器件

型号	品牌	描述	获取价格	数据表
IC42S16160C-6TL	ISSI	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 875 INCH, 0.80 MM PITCH, LEAD FREE,	获取价格
IC42S16160C-7TL	ISSI	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 875 INCH, 0.80 MM PITCH, LEAD FREE,	获取价格
IC42S16400	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-6BG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-6BIG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-6T	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-6TG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-6TI	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-6TIG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-7BG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-7BIG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-7T	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-7TG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-7TI	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400-7TIG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400A	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400A-6BG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400A-6BIG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400A-6T	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格
IC42S16400A-6TG	ICSI	1M x 16Bit x 4 Banks (64-MBIT) SDRAM	获取价格

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