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IC41LV82052S-50T PDF预览

IC41LV82052S-50T

更新时间: 2024-10-01 20:21:59
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
18页 199K
描述
Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, TSOP2-28

IC41LV82052S-50T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:0.400 INCH, TSOP2-28Reach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
访问模式:FAST PAGE最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSOP28,.46
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:3.3 V认证状态:Not Qualified
刷新周期:2048自我刷新:YES
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

IC41LV82052S-50T 数据手册

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IC41C82052S  
IC41LV82052S  
2M x 8 (16-MBIT) DYNAMIC  
RAM  
WITH ꢀAST PAGE MODE  
ꢀEATURES  
DESCRIPTION  
• ꢀAST Page Mode access cycle  
• TTL compatible inputs and outputs  
• Refresh Interval:  
The ICSI 82052S Series is a 2,097,152 x 8-bit high-perfor-  
mance CMOS Dynamic Random Access Memory. The &ast  
Page Mode allows 2,048 random accesses within a single row  
with access cycle time as short as 20 ns per 8-bit word.  
Refresh Mode: RAS-Only,  
CAS-before-RAS (CBR), and Hidden,  
2,048 cycles/32 ms  
These features make the 82052S Series ideally suited for high-  
bandwidthgraphics, digitalsignalprocessing, high-performance  
computing systems, and peripheral applications.  
Self refresh Mode 2,048 cycles/128 ms  
• JEDEC standard pinout  
• Single power supply:  
The 82052S Series is packaged in a 28-pin 300mil SOJ and a  
28 pin TSOP-2  
5V±10% or 3.3V ± 10%  
• Byte Write and Byte Read operation via  
CAS  
PRODUCT SERIES OVERVIEW  
KEY TIMING PARAMETERS  
Part No.  
Refresh  
2K  
Voltage  
5V ± 10%  
3.3V ± 10%  
Parameter  
-50  
50  
13  
25  
20  
84  
-60 Unit  
RAS Access Time (tRAC)  
CAS Access Time (tCAC)  
Column Address Access Time (tAA)  
EDO Page Mode Cycle Time (tPC)  
Read/Write Cycle Time (tRC)  
60  
15  
30  
25  
ns  
ns  
ns  
ns  
IC41C82052S  
IC41LV82052S  
2K  
104 ns  
PIN CONꢀIGURATION  
28 Pin SOJ, TSOP-2  
PIN DESCRIPTIONS  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
WE  
RAS  
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
GND  
A0-A10 Address Inputs  
2
I/O7  
I/O6  
I/O5  
I/O4  
CAS  
OE  
A9  
I/O0-7  
WE  
Data Inputs/Outputs  
Write Enable  
3
4
5
OE  
Output Enable  
Row Address Strobe  
Column Address Strobe  
Power  
6
RAS  
CAS  
Vcc  
7
8
A10  
A0  
9
A8  
10  
11  
12  
13  
14  
A7  
GND  
NC  
Ground  
A1  
A6  
No Connection  
A2  
A5  
A3  
A4  
VCC  
GND  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
DR016-0A 06/12/2001  
1

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