是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | TSOP, TSOP28,.46 | Reach Compliance Code: | unknown |
风险等级: | 5.83 | Is Samacsys: | N |
最长访问时间: | 50 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G28 | JESD-609代码: | e0 |
内存密度: | 4194304 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 8 | 端子数量: | 28 |
字数: | 524288 words | 字数代码: | 512000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP |
封装等效代码: | TSOP28,.46 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 1024 |
自我刷新: | NO | 最大待机电流: | 0.0005 A |
子类别: | DRAMs | 最大压摆率: | 0.11 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IC41LV8512-50TI | ICSI |
获取价格 |
512K x 8 bit Dynamic RAM with EDO Page Mode | |
IC41LV8512-50TI | ISSI |
获取价格 |
EDO DRAM, 512KX8, 50ns, CMOS, PDSO28, 0.400 INCH, TSOP2-28 | |
IC41LV8512-60K | ICSI |
获取价格 |
512K x 8 bit Dynamic RAM with EDO Page Mode | |
IC41LV8512-60K | ISSI |
获取价格 |
EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28 | |
IC41LV8512-60KI | ISSI |
获取价格 |
EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, SOJ-28 | |
IC41LV8512-60KI | ICSI |
获取价格 |
512K x 8 bit Dynamic RAM with EDO Page Mode | |
IC41LV8512-60T | ICSI |
获取价格 |
512K x 8 bit Dynamic RAM with EDO Page Mode | |
IC41LV8512-60T | ISSI |
获取价格 |
EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, TSOP2-28 | |
IC41LV8512-60TI | ICSI |
获取价格 |
512K x 8 bit Dynamic RAM with EDO Page Mode | |
IC41LV8512-60TI | ISSI |
获取价格 |
EDO DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, TSOP2-28 |