Datasheet > IBM11M2645H-70

IBM11M2645H-70

更新时间： 2024-10-28 20:10:11

品牌	Logo	应用领域
国际商业机器公司 - IBM		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
29页	351K
描述
EDO DRAM Module, 2MX64, 70ns, CMOS, PDMA168

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技术参数
数据手册

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IBM11M2645H-70 技术参数

生命周期：	Obsolete	包装说明：	DIMM, DIMM168
Reach Compliance Code：	unknown	风险等级：	5.84
最长访问时间：	70 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PDMA-N168	内存密度：	134217728 bit
内存集成电路类型：	EDO DRAM MODULE	内存宽度：	64
端子数量：	168	字数：	2097152 words
字数代码：	2000000	最高工作温度：	70 °C
最低工作温度：		组织：	2MX64
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIMM	封装等效代码：	DIMM168
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
电源：	5 V	认证状态：	Not Qualified
刷新周期：	2048	座面最大高度：	25.4 mm
自我刷新：	NO	最大待机电流：	0.008 A
子类别：	DRAMs	最大压摆率：	0.64 mA
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	NO LEAD	端子节距：	1.27 mm
端子位置：	DUAL	Base Number Matches：	1

IBM11M2645H-70 数据手册

Discontinued (9/98 - last order; 3/99 last ship)

IBM11M4730C4M

x 72 E12/10, 5.0V, Au.

IBM11M2645H

IBM11M2645HB

2M x 64 DRAM MODULE

Features

• 168 Pin JEDEC Standard, 8 Byte Dual In-line

Memory Module

• System Performance Beneﬁts:

-Buffered inputs (except RAS, Data)

• 2Mx64 Extended Data Out Page Mode DIMM

• Performance:

-Reduced noise (32 V /V pins)

SS CC

-4 Byte Interleave enabled

-Byte write, byte read accesses

-Buffered PDs

-60

-70

t_RAC

t_CAC

t_AA

RAS Access Time

CAS Access Time

Access Time From Address

Cycle Time

60ns

20ns

35ns

70ns

25ns

40ns

• Extended Data Out (EDO) Mode, Read-Modify-

Write Cycles

• Refresh Modes: RAS-Only, CBR and Hidden

Refresh

t_RC

104ns 124ns

25ns 30ns

t_HPC

EDO Mode Cycle Time

• 2048 refresh cycles distributed across 32ms

• 11/10 addressing (Row/Column)

• Card size: 5.25" x 1.0" x 0.157"

• DRAMS in TSOP Package

• All inputs and outputs are LVTTL (3.3V) or TTL

(5.0V) compatible

• Single 3.3V ± 0.3V or 5.0V ± 0.5V Power Supply

• Au contacts

• Optimized for byte-write non-parity applications

Description

IBM11M2645H is an industry standard 168-pin

8-byte Dual In-line Memory Module (DIMM) which is

organized as a 2Mx64 high speed memory array

designed with EDO DRAMs for non-parity applica-

tions. The DIMM uses 8 2Mx8 EDO DRAMs in

TSOP packages. The use of EDO DRAMs allows for

a reduction in Page Mode Cycle time from 40ns

(Fast Page) to 25ns for 60ns DRAM modules.

bits provide information about the DIMM density,

addressing, performance and features. PD bits can

be dotted at the system level and activated for each

DIMM position using the PD enable (PDE) signal. ID

bits also allow detection of card features, and may

be dot-or’d at the system level to provide information

for the entire DIMM bank. For example, if a x64 par-

ity DIMM were inserted into a bank of x72 parity

DIMMs, ID0 (grounded) would indicate that at least

one DIMM in that memory bank is x64, and if the

memory controller is designed to do so, all DIMMs in

that memory bank will function as x64s.

Improved system performance is provided by the

on-DIMM buffering of selected input signals. The

specified timings include all buffer, net and skew

delays, which simplifies the memory subsystem

design analysis. The data and RAS signals are not

buffered, which preserves the DRAM access specifi-

cations of 60ns and 70ns.

All IBM 168-pin DIMMs provide a high performance,

flexible 8-byte interface in a 5.25” long space-saving

footprint. Related products are the x72 parity (5V)

and ECC DIMMs (5V and 3.3V).

Presence Detect (PD) and Identification Detect (ID)

Card Outline (3.3V)

Detail A

(Front)

(Back)

10 11

94 95

168

40 41

124 125

See Detail A

for 5.0V Version

Use is further subject to the provisions at the end of this document.

50H4197

SA14-4614-02

Released 5/96

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与IBM11M2645H-70相关器件

型号	品牌	获取价格	描述	数据表
IBM11M2645H-70T	IBM	获取价格	EDO DRAM Module, 2MX64, 70ns, CMOS, DIMM-168
IBM11M2645L-70J	IBM	获取价格	EDO DRAM Module, 2MX64, 70ns, CMOS, DIMM-168
IBM11M2720Q-60	ETC	获取价格	x72 Fast Page Mode DRAM Module
IBM11M2720Q-60J	ETC	获取价格	x72 Fast Page Mode DRAM Module
IBM11M2720Q-70	ETC	获取价格	x72 Fast Page Mode DRAM Module
IBM11M2720Q-70J	ETC	获取价格	x72 Fast Page Mode DRAM Module
IBM11M2735H-60T	IBM	获取价格	EDO DRAM Module, 2MX72, 60ns, CMOS, DIMM-168
IBM11M2735H-70T	IBM	获取价格	EDO DRAM Module, 2MX72, 70ns, CMOS, DIMM-168
IBM11M32730BB-60	ETC	获取价格	x72 Fast Page Mode DRAM Module
IBM11M32730BB-60J	ETC	获取价格	x72 Fast Page Mode DRAM Module

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