2.0 mm x 2.5 mm Ceramic Package SMD TCXO
I583/I783 Series
Product Features:
Low Current Consumption
Ultra Miniature Package
RoHS Compliant
Applications:
2.50+/- 0.2
Server & Storage
CDMA/WCDMA
802.11 / Wifi
4
3
2.0+/-0.2
Compatible with Leadfree Processing
T1/E1, T3/E3
1
2
Frequency
(Contact Sales Channel for other available frequencies)
0.8 V p-p Min.
Output Level
Clipped Sinewave
1.1 Max.
0.6
Output Load
Clipped Sinewave
0.10
10K Ohms / 10 pF
1
2
3
Frequency Stability
Vs Temperature
Vs Voltage
See Frequency Stability Table
0.2 ppm Max.
.0.2 ppm Max.
4
Vs Load(5%)
0.5
0.10
2 .0 ppm (After 2nd Reflow)
Frequency Tolerance @ 25 C
Recommended Pad Layout
Aging
1 ppm / Year Max.
2.80
Supply Voltage
See Supply Voltage Table , tolerance 5%
0.6
4
1
3
2
Current
2.0 mA Max.
2.3
Voltage Control (I783)
Operating
1.5 VDC 1.0 VDC, 5.0 ppm Min. (Custom Available)
1.4
No pattern area
See Operating Temperature Table
Pin Connection
1
2
3
4
Vcontrol / N.C.
GND
Output
Storage
-40 C to +85 C
-8.0 dBc Max.
Vcc
Harmonics
Phase Noise
Dimension Units: mm
-130 dBc/Hz @ 1KHz
Part Number Guide
Sample Part Number: I583-5P8-26.000 Mhz
Package
Operating Temperature
7 = 0 C to +50 C
FrequencyStability vs Temperature
P = 2.0 ppm
Supply Voltage
3 = 3.3 V
Frequency
7 = 3.0 V
1 = 0 C to +70 C
Q = 2.5 ppm
I583 (Clipped Sinewave TCXO)
I783 (Clipped Sinewave TCVCXO)
8 = 2.8 V
3 = -20 C to +70 C
5 = -30 C to +85 C
R = 3.0 ppm
- 26.000 MHz
2 = 2.7 V
J = 5.0 ppm
1 = 1.8 V
NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 4) and GND (pin 2) to minimize power supply noise.
** Not available for all temperature ranges.
ILSI America Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
11/07/12_B
Specifications subject to change without notice
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