2.5 mm x 3.2 mm Ceramic Package SMD TCXO
I537/I538/I737/I738 Series
3.20
Product Features:
Applications:
4
3
Low Jitter, Non-PLL Based Output
Available in Both Clipped Sinewave and
HCMOS Output Levels
Server & Storage
Sonet /SDH
802.11 / Wifi
T1/E1, T3/E3
Fibre Channel
2.50
Compatible with Leadfree Processing
1
2
Frequency
8.000 Mhz to 40 Mhz
Output Level
Clipped Sinewave
HCMOS
1.2 Max.
0.8 V p-p Min.
‘0’=0.5 VDC Max., ‘1’=0.8Vcc Min.
Output Load
Clipped Sinewave
HCMOS
0.10
20K Ohms / 10 pF
15pF
1
2
3
Duty Cycle (HCMOS)
50% ±10%
10 nS Max.
0.84
0.60
4
Rise / Fall Time
(HCMOS)
0.10
Frequency Stability
Vs Temperature
Vs Voltage
See Frequency Stability Table
0.3 ppm Max.
.0.2 ppm Max.
Vs Load(5%)
Recommended Pad Layout
2.40
Frequency Tolerance @ 25 C
1.0 ppm
Aging
1 ppm / Year Max.
Supply Voltage
Current
See Supply Voltage Table , tolerance 5%
3
2
4
1
2.0 mA Max. (Clipped Sinewave)
6.0 mA Max. (HCMOS)
2.0
1.3
Voltage Control
(I737/I738)
Operating
1.5 VDC 1.0 VDC, 5.0 ppm Min.
See Operating Temperature Table
-40 C to +85 C
0.9
Pin Connection
1
2
3
4
Vcontrol / N.C.
Storage
GND
Output
Vcc
Phase Noise
(Typ. @ 20 Mhz)
-86 dBc/Hz @ 10 Hz
-115 dBc/Hz @ 100 Hz
-138 dBc/Hz @ 1KHz
-146 dBc/Hz @ 10 Khz
Dimension Units: mm
Part Number Guide
Operating Temperature
7 = 0 C to +50 C
Sample Part Number: I537-1Q3-20.000 Mhz
Package
FrequencyStability vs Temperature
**N = 1.0 ppm
Supply Voltage
3 = 3.3 V
Frequency
I537 (Clipped Sinewave TCXO)
I538 (HCMOS TCXO)
7 = 3.0 V
1 = 0 C to +70 C
**O = 1.5 ppm
I737 (Clipped Sinewave TCVCXO)
I738 (HCMOS TCVCXO)
3 = -20 C to +70 C
2 = -40 C to +85 C
**P = 2.0 ppm
2 = 2.7 V
- 20.000 MHz
Q = 2.5 ppm
R = 3.0 ppm
J = 5.0 ppm
NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 4) and GND (pin 2) to minimize power supply noise.
** Not available for all temperature ranges.
ILSI America Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
12/20/11 _D
Specifications subject to change without notice
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