3.2 mm x 5 mm Ceramic Package SMD TCXO
I533/I534/I733/I734 Series
Product Features:
Low Jitter, Non-PLL Based Output
Available in Both Clipped Sinewave and
HCMOS Output Levels
Applications:
Server & Storage
Sonet /SDH
5.0
802.11 / Wifi
4
3
Compatible with Leadfree Processing
T1/E1, T3/E3
Fibre Channel
3.2
Frequency
8.000 Mhz to 40 Mhz
1
2
Output Level
Clipped Sinewave
HCMOS
0.8 V p-p Min.
‘0’=0.5 VDC Max., ‘1’=0.8Vcc Min.
1.5
Output Load
Clipped Sinewave
HCMOS
20K Ohms / 10 pF
15pF
2.6
1
2
3
Duty Cycle (HCMOS)
50% ±10%
10 nS Max.
Rise / Fall Time
(HCMOS)
4
1.4
Frequency Stability
Vs Temperature
Vs Voltage
See Frequency Stability Table
0.3 ppm Max.
.0.2 ppm Max.
Vs Load(5%)
4.0
Frequency Tolerance @
25 C
Aging
1.0 ppm
4
1
3
1.35
2.5
1 ppm / Year Max.
2
Supply Voltage
Current
See Supply Voltage Table , tolerance 5%
1.6
2.0 mA Max. (Clipped Sinewave)
6.0 mA Max. (HCMOS)
Pin Connection
Voltage Control
(I733/I734)
Operating
1.5 VDC 1.0 VDC, 5.0 ppm Min.
See Operating Temperature Table
-40 C to +85 C
1
2
3
4
Control Voltage or N.C.
GND
Output
Vcc
Storage
Dimension Units: mm
Phase Noise
(typ. @ 20Mhz)
-86 dBc/Hz @ 10 Hz
-115 dBc/Hz @ 100 Hz
-138 dBc/Hz @ 1KHz
-146 dBc/Hz @ 10 Khz
Part Number Guide
Operating Temperature
7 = 0 C to +50 C
Sample Part Number: I537-1Q3-20.000 Mhz
Package
FrequencyStability vs Temperature
**N = 1.0 ppm
Supply Voltage
3 = 3.3 V
Frequency
I533 (Clipped Sinewave TCXO)
I534 (HCMOS TCXO)
7 = 3.0 V
1 = 0 C to +70 C
**O = 1.5 ppm
I733 (Clipped Sinewave TCVCXO)
I734 (HCMOS TCVCXO)
2 = 2.7 V
3 = -20 C to +70 C
2 = -40 C to +85 C
**P = 2.0 ppm
- 20.000 MHz
Q = 2.5 ppm
R = 3.0 ppm
J = 5.0 ppm
NOTE: A 0.01 µF bypass capacitor is recommended between Vcc (pin 4) and GND (pin 2) to minimize power supply noise.
** Not available for all temperature ranges.
ILSI America Phone: 775-851-8880 • Fax: 775-851-8882• e-mail: e-mail@ilsiamerica.com • www.ilsiamerica.com
12/20/11_D
Specifications subject to change without notice
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