Datasheet > I1LV3216ISD-5SI

I1LV3216ISD-5SI

更新时间： 2024-10-14 05:38:51

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
18页	195K
描述
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)

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中文翻译

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数据手册

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I1LV3216ISD-5SI 数据手册

Preliminary

R1LV3216R Series

32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)

REJ03C0367-0001

Preliminary

Rev.0.01

2008.03.24

Description

The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by

16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LV3216R Series is suitable for memory applications where a simple interfacing, battery operating

and battery backup are the important design objectives.

The R1LV3216R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin

pitch of 0.5mm] and 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch

of 0.4mm]. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of

printed circuit boards.

Features

•

Single 2.7~3.6V power supply

Small stand-by current: 4 µA (3.0V, typical)

No clocks, No refresh

All inputs and outputs are TTL compatible.

Easy memory expansion by CS1#, CS2, LB# and UB#

Common Data I/O

Three-state outputs: OR-tie Capability

OE# prevents data contention on the I/O bus

Ordering Information

Type No.

Access time

55 ns^*1

70 ns

Package

R1LV3216RSA-5S%

R1LV3216RSA-7S%

R1LV3216RSD-5S%

R1LV3216RSD-7S%

12mm x 20mm 48-pin plastic TSOP (I)

(normal-bend type) (48P3R)

350 mil 52-pin plastic μ-TSOP (II)

(normal-bend type) (52PTG)

55 ns^*1

70 ns

Note1. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer’s

system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.

% - Temperature version; see table below

Temperature Range

0 ~ +70 °C

-40 ~ +85 °C

REJ03C0367-0001, Rev.0.01, 2008.03.24

Page 1 of 16

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型号	品牌	获取价格	描述	数据表
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