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HZS12LB3 PDF预览

HZS12LB3

更新时间: 2024-02-01 10:41:43
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管齐纳二极管
页数 文件大小 规格书
7页 74K
描述
Silicon Epitaxial Planar Zener Diode for Low Noise Application

HZS12LB3 数据手册

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HZS-L Series  
Silicon Epitaxial Planar Zener Diode for  
Low Noise Application  
REJ03G0166-0200Z  
(Previous: ADE-208-121A)  
Rev.2.00  
Jan.06.2004  
Features  
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.  
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for  
stabilized power supply, etc.  
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS-L Series  
Type No.  
MHD  
Pin Arrangement  
B
2
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.2.00, Jan.06.2003, page 1 of 6  

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