是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.42 |
Is Samacsys: | N | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 0.2 W | 认证状态: | Not Qualified |
标称参考电压: | 2.63 V | 子类别: | Voltage Reference Diodes |
表面贴装: | YES | 技术: | ZENER |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 4.76% | 工作测试电流: | 5 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HZM2.7NB1TL-E | RENESAS |
获取价格 |
2.7V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3 | |
HZM2.7NB1TR | RENESAS |
获取价格 |
2.7V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3 | |
HZM2.7NB1TR-E | RENESAS |
获取价格 |
HZM2.7NB1TR-E | |
HZM2.7NB2 | RENESAS |
获取价格 |
Silicon Epitaxial Planar Zener Diode for Stabilizer | |
HZM2.7NB2TL | HITACHI |
获取价格 |
Zener Diode, 2.775V V(Z), 4.5%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN | |
HZM2.7NB2TL | RENESAS |
获取价格 |
2.78V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3 | |
HZM2.7NB2TR | RENESAS |
获取价格 |
2.7V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3 | |
HZM2.7NB2TR | HITACHI |
获取价格 |
Zener Diode, 2.775V V(Z), 4.5%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN | |
HZM2.7NB2TR-E | RENESAS |
获取价格 |
2.7V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3 | |
HZM2.7NBTL | HITACHI |
获取价格 |
Zener Diode, 2.7V V(Z), 7.41%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN |