Datasheet > HY62U8200LST-I-85

HY62U8200LST-I-85

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器光电二极管
页数	文件大小	规格书
11页	161K
描述
Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

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HY62V8200-(I)/HY62U8200-(I) Series

ABSOLUTE MAXIMUM RATING (1)

Symbol

VIN, VOUT

VCC

Parameter

Voltage on any pin relative to Vss

Voltage on Vcc supply relative to

Vss

Rating

-0.2 to 3.9

-0.2 to 4.0

Unit

Remark

Operating Temperature

0 to 70

HY62V8200

HY62U8200

HY62V8200-I

HY62U8200-I

°C

-40 to 85

TSTG

Storage Temperature

Power Dissipation

-55 to 150

1.0

°C

IOUT

Data Output Current

TSOLDER

Lead Soldering Temperature & Time

260 · 5

°C·sec

Note

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is stress rating only and the functional operation of the device under these or

any other conditions above those indicated in the operation of this specification is not implied.

Exposure to the absolute maximum rating conditions for extended period may affect reliability.

RECOMMENDED DC OPERATING CONDITION

Symbol

Vcc

Parameter

Supply Voltage

Product

HY62V8200-(I)

HY62U8200-(I)

HY62V8200-(I)

HY62U8200-(I)

HY62V8200-(I)

HY62U8200-(I)

Min.

3.0

2.7

Typ.

3.3

3.0

Max.

3.6

3.3

Unit

Vss

VIH

VIL

Ground

Input High

Voltage

Input Low Voltage HY62V8200-(I)

HY62U8200-(I)

2.2

Vcc+0.2

0.4

-0.2(1)

Note

1. VIL = -1.5V for pulse width less than 30ns

TRUTH TABLE

/CS1 CS2

/WE /OE

MODE

I/O OPERATION

High-Z

Data Out

Data In

Current

Isb

Isb, Isb1

Icc

Standby

Output Disabled

Read

Write

Icc

Note :

1. H=VIH, L=VIL, X=don't care

Rev.06 /Jan.99

1 234 5 6 7...11

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