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HY62KT08081E-DG70E PDF预览

HY62KT08081E-DG70E

更新时间: 2024-02-21 23:33:22
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
12页 192K
描述
x8 SRAM

HY62KT08081E-DG70E 数据手册

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HY62K(U,V)T08081E Series  
32Kx8bit CMOS SRAM  
Document Title  
32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM  
Revision History  
Revision No History  
Draft Date  
Remark  
00  
01  
Initial  
Jan.20.2000  
Final  
Merged 3.0V/3.3V SPEC  
Revised  
Feb.21.2001  
Apr.30.2001  
Final  
Final  
-
-
Marking Information Change : SOP Type  
Voh Limit Change : 2.4V => 2.2V @2.7~3.6V  
02  
Changed Logo  
-
HYUNDAI -> hynix  
-
Marking Information Change  
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility  
for use of circuits described. No patent licenses are implied.  
Rev 02 / Apr. 2001  
Hynix Semiconductor