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HY5V58BF-P PDF预览

HY5V58BF-P

更新时间: 2024-02-19 15:21:56
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
14页 268K
描述
Synchronous DRAM, 32MX8, 6ns, CMOS, PBGA54, 8 X 13.50 MM, 0.80 MM PITCH, FBGA-54

HY5V58BF-P 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA54,9X9,32针数:54
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B54JESD-609代码:e1
长度:13.5 mm内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:54字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA54,9X9,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH电源:3.3 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.07 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.2 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

HY5V58BF-P 数据手册

 浏览型号HY5V58BF-P的Datasheet PDF文件第1页浏览型号HY5V58BF-P的Datasheet PDF文件第2页浏览型号HY5V58BF-P的Datasheet PDF文件第4页浏览型号HY5V58BF-P的Datasheet PDF文件第5页浏览型号HY5V58BF-P的Datasheet PDF文件第6页浏览型号HY5V58BF-P的Datasheet PDF文件第7页 
HY5V58B(L)F  
Ball DESCRIPTION  
Ball  
Ball NAME  
DESCRIPTION  
The system clock input. All other inputs are registered to the SDRAM on the  
rising edge of CLK  
CLK  
Clock  
Controls internal clock signal and when deactivated, the SDRAM will be one  
of the states among power down, suspend or self refresh  
CKE  
Clock Enable  
Chip Select  
CS  
Enables or disables all inputs except CLK, CKE and DQM  
Selects bank to be activated during RAS activity  
Selects bank to be read/written during CAS activity  
BA0, BA1  
Bank Address  
Row Address : RA0 ~ RA12, Column Address : CA0 ~ CA9  
Auto-precharge flag : A10  
A0 ~ A12  
Address  
Row Address Strobe, Col-  
umn Address Strobe, Write  
Enable  
RAS, CAS and WE define the operation  
Refer function truth table for details  
RAS, CAS, WE  
DQM  
Data Input/Output Mask  
Data Input/Output  
Controls output buffers in read mode and masks input data in write mode  
Multiplexed data input / output Ball  
DQ0 ~ DQ7  
VDD/VSS  
VDDQ/VSSQ  
NC  
Power Supply/Ground  
Data Output Power/Ground  
No Connection  
Power supply for internal circuits and input buffers  
Power supply for output buffers  
No connection  
Rev. 0.1/Apr. 02  
4

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