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HY5V62DF-55 PDF预览

HY5V62DF-55

更新时间: 2024-01-11 09:00:39
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器内存集成电路
页数 文件大小 规格书
13页 374K
描述
Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90

HY5V62DF-55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA,
针数:90Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.5访问模式:FOUR BANK PAGE BURST
最长访问时间:5 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B90长度:13 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:32功能数量:1
端口数量:1端子数量:90
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX32
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

HY5V62DF-55 数据手册

 浏览型号HY5V62DF-55的Datasheet PDF文件第2页浏览型号HY5V62DF-55的Datasheet PDF文件第3页浏览型号HY5V62DF-55的Datasheet PDF文件第4页浏览型号HY5V62DF-55的Datasheet PDF文件第5页浏览型号HY5V62DF-55的Datasheet PDF文件第6页浏览型号HY5V62DF-55的Datasheet PDF文件第7页 
64Mb Synchronous DRAM based on 512K x 4Bank x32 I/O  
Document Title  
4Bank x 512K x 32bits Synchronous DRAM  
Revision History  
Revision No.  
History  
1) Inicial Version Release  
Draft Date  
Jan. 2005  
Jan. 2005  
Feb. 2005  
Remark  
Preliminary  
Preliminary  
Preliminary  
0.1  
0.2  
0.3  
1) Corrected OREDERING INFORMATION  
1) Corrected a type error at BALL CONFIGURATION  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev. 0.3 / Feb. 2005  
1

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