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HY5V62DF-55 PDF预览

HY5V62DF-55

更新时间: 2024-02-28 01:26:55
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器内存集成电路
页数 文件大小 规格书
13页 374K
描述
Synchronous DRAM, 2MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-90

HY5V62DF-55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA,
针数:90Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.5访问模式:FOUR BANK PAGE BURST
最长访问时间:5 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B90长度:13 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:32功能数量:1
端口数量:1端子数量:90
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX32
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

HY5V62DF-55 数据手册

 浏览型号HY5V62DF-55的Datasheet PDF文件第3页浏览型号HY5V62DF-55的Datasheet PDF文件第4页浏览型号HY5V62DF-55的Datasheet PDF文件第5页浏览型号HY5V62DF-55的Datasheet PDF文件第7页浏览型号HY5V62DF-55的Datasheet PDF文件第8页浏览型号HY5V62DF-55的Datasheet PDF文件第9页 
111Preliminary  
Synchronous DRAM Memory 64Mbit (2Mx32bit)  
HY5V62D(L/S)F(P) Series  
BASIC FUNCTIONAL DESCRIPTION  
Mode Register  
BA1  
0
BA0  
0
A11  
0
A10  
0
A9  
A8  
0
A7  
0
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
OP Code  
CAS Latency  
Burst Length  
OP Code  
A9  
0
Write Mode  
Burst Read and Burst Write  
Burst Read and Single Write  
Burst Type  
1
A3  
0
Burst Type  
Sequential  
Interleave  
1
CAS Latency  
Burst Length  
A6  
0
A5  
0
A4  
CAS Latency  
Reserved  
1
Burst Length  
A2  
A1  
A0  
0
1
0
1
0
1
0
1
A3 = 0  
A3=1  
0
0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
1
2
4
8
0
1
2
0
1
3
4
1
0
R e s e r v e d  
Reserved  
Reserved  
R e s e r v e d  
8
1
0
Reserved  
Reserved  
Reserved  
Full Page  
Reserved  
Reserved  
Reserved  
Reserved  
1
1
1
1
Rev. 0.3 / Feb. 2005  
6

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