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HY5V22LF-5 PDF预览

HY5V22LF-5

更新时间: 2024-11-27 02:57:11
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器
页数 文件大小 规格书
15页 914K
描述
4 Banks x 1M x 32Bit Synchronous DRAM

HY5V22LF-5 数据手册

 浏览型号HY5V22LF-5的Datasheet PDF文件第2页浏览型号HY5V22LF-5的Datasheet PDF文件第3页浏览型号HY5V22LF-5的Datasheet PDF文件第4页浏览型号HY5V22LF-5的Datasheet PDF文件第5页浏览型号HY5V22LF-5的Datasheet PDF文件第6页浏览型号HY5V22LF-5的Datasheet PDF文件第7页 
HY57V283220(L)T(P)/ HY5V22(L)F(P)  
4 Banks x 1M x 32Bit Synchronous DRAM  
Revision History  
Revision No.  
History  
Remark  
0.1  
0.2  
Defined Preliminary Specification  
1) Modified FBGA Ball Configuration Typo.  
2) Changed Functional Block Diagram from A10 to A11.  
3) Changed VDD min from 3.0V to 3.135V.  
4) Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.  
5) Insert tAC2 Value.  
6) Insdrt tRAS & CLK Value.  
0.3  
0.4  
0.5  
0.6  
0.7  
Defined IDD Spec.  
Delited Preliminary.  
Changed IDD Spec.  
133MHz Speed Added  
Changed FBGA Package Size from 11x13 to 8x13.  
1) Changed VDD min from 3.135V to 3.0V.  
2) Changed VIL min from VSSQ-0.3V to -0.3V.  
0.8  
0.9  
Modified of size erra. (Page15)  
(Equation : 13.00 ± 10 -> 13.00 ± 0.10)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume  
any responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.9 / July 2004  

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