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HY5DU12422CTP-HI PDF预览

HY5DU12422CTP-HI

更新时间: 2024-11-01 12:59:11
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率
页数 文件大小 规格书
33页 371K
描述
DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

HY5DU12422CTP-HI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSSOP66,.46
针数:66Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:0.75 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:2,4,8JESD-30 代码:R-PDSO-G66
JESD-609代码:e6长度:22.225 mm
内存密度:536870912 bit内存集成电路类型:DDR DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:66
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSSOP66,.46
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):260电源:2.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.194 mm自我刷新:YES
连续突发长度:2,4,8最大待机电流:0.01 A
子类别:DRAMs最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:10.16 mmBase Number Matches:1

HY5DU12422CTP-HI 数据手册

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HY5DU12422A(L)T  
HY5DU12822A(L)T  
HY5DU121622A(L)T  
512Mb DDR SDRAM  
HY5DU12422A(L)T  
HY5DU12822A(L)T  
HY5DU121622A(L)T  
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume  
any responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.0/Feb. 2003  
1

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